Resistive switching behavior of quasi-2D CsPbBr3 memristors: Impact of ambient atmosphere on logic storage and computing integration with anti-crosstalk and reconfiguration features

Abstract

Passive units integrating storage and computing with anti-crosstalk and multi-logic reconstruction are crucial for high computing power and high-density non-volatile storage. In this study, we report an anti-crosstalk and reconfigurable logic memory based on a single passive quasi-two-dimensional (2D) CsPbBr3 device. The effect of the ambient atmosphere (air and N2 environments) on the resistive behavior of the memristors is explored. In air, these devices exhibit negative differential resistance (NDR) effects and antipolar resistive switching behavior, while in N2, they display irreversible switching from low-resistance state to high-resistance state. Various active electrodes (Ag, Cu, Au, and C) were employed to investigate this phenomenon. It is proposed that in air, O ions interact with surface defects under high alternating voltage, retaining a significant quantity of Br− ions within the quasi-2D CsPbBr3, resulting in capacitive-like behavior. Conversely, in N2, surface defects capture Br− ions, leading to the absence of a hysteresis loop in the I-V characteristic. Under N2 operation, write-once-read-many (WORM) capability is achieved. Surprisingly, operating under air enables integrated non-volatile storage and computing, facilitating 12 reconfigurable logic operations in a passive 1R structure and suppressing sneak current in crosstalk setups. This study emphasizes the pivotal role of air in the resistive switching mechanism and provides novel insights for developing next-generation memories tailored for high-density integrated circuits and storage-computing integration.