Compositional engineering for lead-free antimony bismuth alloy-based halide perovskite solar cells

IF 5.1 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
Ziyu Cai, Junchi Zhu, Chenyuan Ding, Tao Dong, Boyang Yu, Wenzheng Hu, Jiayi Xie, Feng Ye, Qiufeng Ye, Zebo Fang
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引用次数: 2

Abstract

Abstract Owing to their low toxicity and remarkable stability, perovskites based on antimony and bismuth have garnered significant interest in recent years. However, A 3 B 2 X 9 perovskite materials derived from antimony and bismuth face several challenges, including excessively wide band gaps, elevated defect densities, and suboptimal film quality, all of which hinder advancements in device efficiency. While extensive studies have been undertaken to investigate the effects of modulating the A-site and X-site elements in lead-free A 3 B 2 X 9 perovskites, there remains a notable scarcity of reports addressing the impact of modifications to the B-site element. In this study, we investigated the alloying of antimony and bismuth within the 2D Cs 3 B 2 I 6 Br 3 perovskite. By systematically varying the ratios of two elements, we found that the incorporation of both antimony and bismuth at the B-site significantly enhances the quality of the perovskite films. Our findings indicate that a 1 : 1 ratio of antimony to bismuth produces the densest films, the highest photoluminescence intensity, and superior photovoltaic performance. Ultimately, the devices fabricated using this optimal ratio achieved an open-circuit voltage ( V OC ) of 1.01 V and a power conversion efficiency (PCE) of 0.645%.
无铅锑铋合金基卤化物钙钛矿太阳能电池的组成工程
基于锑和铋的钙钛矿具有低毒性和显著的稳定性,近年来引起了人们的极大兴趣。然而,由锑和铋衍生的a32x9钙钛矿材料面临着一些挑战,包括过宽的带隙、高缺陷密度和次优薄膜质量,所有这些都阻碍了器件效率的进步。虽然已经进行了广泛的研究来调查无铅a3b2x9钙钛矿中A位和X位元素的调节效果,但关于B位元素修饰影响的报道仍然明显缺乏。在本研究中,我们研究了锑和铋在二维c3b2i6b3钙钛矿中的合金化。通过系统地改变两种元素的比例,我们发现锑和铋在b位的掺入显著提高了钙钛矿薄膜的质量。我们的研究结果表明,1:1的锑铋比可以产生最致密的薄膜,最高的光致发光强度和优越的光伏性能。最终,使用该最佳比例制造的器件实现了1.01 V的开路电压(V OC)和0.645%的功率转换效率(PCE)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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