Yunxiao Zhang;Yuanzhang Zhang;Wenxin Lin;Yuhao Liu;Hao Hu
{"title":"Electrical Tree Inhibition Characteristics of AOS Grafted Epoxy Resin Composites Considering the Coupling Effects of High Frequency and Temperature","authors":"Yunxiao Zhang;Yuanzhang Zhang;Wenxin Lin;Yuhao Liu;Hao Hu","doi":"10.1109/TDEI.2026.3656102","DOIUrl":null,"url":null,"abstract":"Encapsulation insulation materials for high-frequency transformers endure coupled electrothermal stresses from sustained high-frequency pulsed voltages and elevated operational temperatures, exhibiting inherent limitations in electrical treeing resistance that trigger premature insulation degradation. To address this, 4-acetoxystyrene (AOS) is chemically grafted onto <inline-formula> <tex-math>$E$ </tex-math></inline-formula>-51 bisphenol-A epoxy resin (DGEBA) via free radical grafting, forming DGEBA-g-AOS composites with varied AOS contents. The electrical tree growth characteristics under high-frequency (10 kHz) conditions at both room temperature (<inline-formula> <tex-math>$25~^{\\circ }$ </tex-math></inline-formula>C) and high temperature (<inline-formula> <tex-math>$90~^{\\circ }$ </tex-math></inline-formula>C) are systematically investigated through physicochemical characterization, quantum chemical calculations, and trap property analysis. The results demonstrate that at <inline-formula> <tex-math>$25~^{\\circ }$ </tex-math></inline-formula>C and 10 kHz, AOS effectively delays electrical tree initiation and propagation by trapping high-energy electrons and increasing trap density. Under <inline-formula> <tex-math>$90~^{\\circ }$ </tex-math></inline-formula>C and 10 kHz conditions, although the electrical tree growth rate shows no significant reduction, branch complexity decreases, and the damage area diminishes. This study provides critical insights for the development of advanced encapsulation insulation materials in high-frequency/high-temperature transformers.","PeriodicalId":13247,"journal":{"name":"IEEE Transactions on Dielectrics and Electrical Insulation","volume":"33 5","pages":"3358-3367"},"PeriodicalIF":3.3000,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Dielectrics and Electrical Insulation","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11358922/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/1/19 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Encapsulation insulation materials for high-frequency transformers endure coupled electrothermal stresses from sustained high-frequency pulsed voltages and elevated operational temperatures, exhibiting inherent limitations in electrical treeing resistance that trigger premature insulation degradation. To address this, 4-acetoxystyrene (AOS) is chemically grafted onto $E$ -51 bisphenol-A epoxy resin (DGEBA) via free radical grafting, forming DGEBA-g-AOS composites with varied AOS contents. The electrical tree growth characteristics under high-frequency (10 kHz) conditions at both room temperature ($25~^{\circ }$ C) and high temperature ($90~^{\circ }$ C) are systematically investigated through physicochemical characterization, quantum chemical calculations, and trap property analysis. The results demonstrate that at $25~^{\circ }$ C and 10 kHz, AOS effectively delays electrical tree initiation and propagation by trapping high-energy electrons and increasing trap density. Under $90~^{\circ }$ C and 10 kHz conditions, although the electrical tree growth rate shows no significant reduction, branch complexity decreases, and the damage area diminishes. This study provides critical insights for the development of advanced encapsulation insulation materials in high-frequency/high-temperature transformers.
期刊介绍:
Topics that are concerned with dielectric phenomena and measurements, with development and characterization of gaseous, vacuum, liquid and solid electrical insulating materials and systems; and with utilization of these materials in circuits and systems under condition of use.