Electrical and optical properties of In and F co-doped ZnO thin films prepared by sol-gel spin-coating

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Surfaces and Interfaces Pub Date : 2026-05-03 DOI:10.1016/j.surfin.2026.109487

Wei Zhang , Rui Tong , Xinhui Yang , Xue Wang

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Abstract

The preparation of In and F co-doped ZnO (IFZO) thin films on quartz substrates by sol-gel spin-coating method. The structure, electrical properties, optical transmission spectroscopy characteristics, and defects have been systematically investigated. The results demonstrate that all the IFZO thin films exhibit a typical wurtzite structure with a preferential c-axis orientation. Notably, both the electrical conductivity and optical transmittance of the IFZO thin films are significantly enhanced compared to those of In-doped ZnO (IZO) thin films. The IFZO thin films achieve a minimum resistivity of 2.808 × 10^-3 Ω·cm, accompanied by a carrier concentration of 9.828 × 10¹⁹ cm^-3, and a Hall mobility of 13.69 cm² / V·s. All IFZO thin films exhibit an optical transmittance exceeding 90% in the visible region (380–780 nm), with a significant enhancement also observed in the near-infrared region. Analysis via photoluminescence (PL) spectroscopy and electron paramagnetic resonance (EPR) spectroscopy demonstrates that IFZO films exhibit remarkable performance enhancement. The underlying mechanism is that fluorine ions efficiently fill lattice V_O and optimize the lattice microenvironment, thereby facilitating substitutional indium doping and enhancing electron mobility modulation in the films. On account of their excellent electrical and optical properties, the IFZO thin films are well-suited for applications involving transparent conductive materials. Furthermore, this study on IFZO thin films paves a promising path for the development of high-performance transparent conductive films.

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溶胶-凝胶自旋镀膜法制备In和F共掺杂ZnO薄膜的电学和光学性质

溶胶-凝胶自旋镀膜法在石英衬底上制备In和F共掺杂ZnO （IFZO）薄膜。系统地研究了该材料的结构、电性能、透射光谱特性和缺陷。结果表明，所有的IFZO薄膜都表现出典型的纤锌矿结构，具有优先的c轴取向。值得注意的是，与掺杂ZnO （IZO）薄膜相比，IFZO薄膜的电导率和光透射率都得到了显著提高。IFZO薄膜的最小电阻率为2.808 × 10-3 Ω·cm，载流子浓度为9.828 × 1019 cm-3，霍尔迁移率为13.69 cm2 / V·s。所有IFZO薄膜在可见光区（380-780 nm）的透光率均超过90%，在近红外区也有显著增强。通过光致发光（PL）光谱和电子顺磁共振（EPR）光谱分析表明，IFZO薄膜具有显著的性能增强。其潜在机制是氟离子有效填充晶格VO并优化晶格微环境，从而促进铟的取代掺杂，增强薄膜中的电子迁移率调制。由于其优异的电学和光学性能，IFZO薄膜非常适合用于涉及透明导电材料的应用。此外，对IFZO薄膜的研究为高性能透明导电薄膜的发展铺平了一条有希望的道路。

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来源期刊

Surfaces and Interfaces Chemistry-General Chemistry

CiteScore

8.50

自引率

6.50%

发文量

753

审稿时长

35 days

期刊介绍： The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results. Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)