On the Electron Transport in Simplified IBC-SHJ Solar Cells With MoOx Blanket Layer

IF 10.2 2区 材料科学 Q1 ENERGY & FUELS
Progress in Photovoltaics Pub Date : 2026-04-05 Epub Date: 2025-12-16 DOI:10.1002/pip.70054
Katarina Kovačević, Yifeng Zhao, Paul Procel, Liqi Cao, Miro Zeman, Luana Mazzarella, Olindo Isabella
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引用次数: 0

Abstract

Interdigitated-back-contacted silicon heterojunction (IBC-SHJ) solar cells with molybdenum oxide (MoOx) as a hole transport layer and a novel (n)-type hydrogenated nanocrystalline silicon (nc-Si:H)/MoOx electron transport stack use ultra-thin MoOx as a full-area blanket layer. This solar cell architecture is realized with a simplified fabrication process and ensures high shunt resistances, attributed to the low lateral conductivity of the MoOx layer. Here we investigate the electron transport mechanisms through the electron collection contact to improve the understanding and performance of the IBC-SHJ solar cells. For this evaluation, we first introduce plasma treatments between (n)nc-Si:H and MoOx and assess their role in passivation, charge carrier transport and MoOx growth. Temperature-dependent current–voltage (I–V) measurements of front/back-contacted (FBC) solar cells with (n)nc-Si:H/MoOx stack, supported by high-resolution transmission electron microscopy (HR-TEM) and energy dispersive X-ray spectroscopy (EDX) imaging and numerical simulations, reveal that plasma treatment (PT) and plasma treatment with boron (PTB) enable electron transport based on direct energy transitions. Next, we perform thickness sensitivity analysis to find the optimal layer thicknesses of (n)nc-Si:H and MoOx. While FBC-SHJ devices exhibit stable performance across a broad range of (n)nc-Si:H thicknesses (10–50 nm), IBC-SHJ devices are more sensitive to such a thickness variation, with thinner (n)-layers limiting final device efficiency. The combination of 50-nm thick (n)nc-Si:H, PTB, and 1.7-nm thick MoOx enables the best performance of IBC-SHJ solar cells. When metallized with electroplated Cu, our champion IBC-SHJ solar cell with MoOx blanket layer reaches an efficiency of 23.59%. Further advancements in (n)nc-Si:H properties, passivation, transparent conductive oxide selection, and front-side light management are expected to drive efficiencies well above 24%.

Abstract Image

具有MoOx覆盖层的简化IBC-SHJ太阳能电池的电子输运研究
以氧化钼(MoOx)为空穴传输层的互指背接触硅异质结(IBC-SHJ)太阳能电池和一种新型(n)型氢化纳米晶硅(nm - si:H)/MoOx电子传输堆栈使用超薄的MoOx作为全面积覆盖层。这种太阳能电池结构通过简化的制造工艺实现,并确保高分流电阻,这归因于MoOx层的低横向电导率。本文通过电子收集接触来研究电子传递机制,以提高对IBC-SHJ太阳能电池的认识和性能。为了进行评估,我们首先引入了(n)nc-Si:H和MoOx之间的等离子体处理,并评估了它们在钝化、载流子传输和MoOx生长中的作用。在高分辨率透射电子显微镜(HR-TEM)和能量色散x射线光谱(EDX)成像和数值模拟的支持下,对具有(n)nc-Si:H/MoOx堆栈的前/后接触(FBC)太阳能电池进行了温度相关的电流-电压(I-V)测量,揭示了等离子体处理(PT)和硼等离子体处理(PTB)能够实现基于直接能量跃迁的电子传输。接下来,我们进行了厚度敏感性分析,以找到(n)nc-Si:H和MoOx的最佳层厚度。虽然FBC-SHJ器件在(n)nc-Si:H厚度(10-50 nm)的大范围内表现出稳定的性能,但IBC-SHJ器件对这种厚度变化更敏感,更薄的(n)层限制了最终器件的效率。50nm厚(n)nc-Si:H、PTB和1.7 nm厚MoOx的组合使IBC-SHJ太阳能电池的性能达到最佳。当镀铜金属化时,我们的冠军IBC-SHJ太阳能电池具有MoOx涂层层,效率达到23.59%。在(n)nc-Si:H性能、钝化、透明导电氧化物选择和前端光管理方面的进一步进步有望将效率提高到24%以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Progress in Photovoltaics
Progress in Photovoltaics 工程技术-能源与燃料
CiteScore
18.10
自引率
7.50%
发文量
130
审稿时长
5.4 months
期刊介绍: Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers. The key criterion is that all papers submitted should report substantial “progress” in photovoltaics. Papers are encouraged that report substantial “progress” such as gains in independently certified solar cell efficiency, eligible for a new entry in the journal''s widely referenced Solar Cell Efficiency Tables. Examples of papers that will not be considered for publication are those that report development in materials without relation to data on cell performance, routine analysis, characterisation or modelling of cells or processing sequences, routine reports of system performance, improvements in electronic hardware design, or country programs, although invited papers may occasionally be solicited in these areas to capture accumulated “progress”.
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