Nicolau López-Pintó, Christopher J. Jensen, Zhijie Chen, Zihui Zeng, Christy J. Kinane, Andrew J. Caruana, Alexander J. Grutter, Julie A. Borchers, Enric Menéndez, Josep Nogués, Kai Liu, Jordi Sort
{"title":"Compositionally tunable Néel temperature in Mn1−xCoxN: A route to enhance magneto-ionic exchange bias control","authors":"Nicolau López-Pintó, Christopher J. Jensen, Zhijie Chen, Zihui Zeng, Christy J. Kinane, Andrew J. Caruana, Alexander J. Grutter, Julie A. Borchers, Enric Menéndez, Josep Nogués, Kai Liu, Jordi Sort","doi":"10.1016/j.jmst.2026.04.010","DOIUrl":null,"url":null,"abstract":"To address growing computational demands, energy-efficient hardware technologies such as spintronics and neuromorphic computing have attracted significant interest. In particular, magneto-ionics offers a low-power, non-volatile approach to control magnetic properties, making it particularly suitable for manipulating antiferromagnetic (AFM) materials. In this work, we report magneto-ionic control of exchange bias (EB) in Mn<sub>1−</sub><em><sub>x</sub></em>Co<em><sub>x</sub></em>N/Co with a compositionally tunable Néel temperature, <em>T</em><sub>N</sub>. The high <em>T</em><sub>N</sub> in MnN (> 650 K) typically necessitates high-temperature annealing, which triggers uncontrolled thermally induced ion-motion effects. Co addition to MnN reduces <em>T</em><sub>N</sub>, enabling robust EB to be established after field cooling from 400 K, while preserving structural integrity. Importantly, EB can be subsequently tuned by voltage, up to a 30% enhancement observed at 100 K alongside an increase in saturation magnetization (up to ≈ 250 emu cm<sup>−3</sup>). Unlike previous works on similar single-layer nitrides, incorporating an additional ferromagnetic Co layer to form an AFM/ferromagnetic bilayer amplifies the voltage-induced effects. This work highlights the dual role of Co addition to MnN: (i) reducing the thermal requirements for setting EB by lowering <em>T</em><sub>N</sub>, and (ii) enhancing electrical control of EB. These results represent a step forward towards the development of low-power voltage-controlled spintronic devices.","PeriodicalId":16154,"journal":{"name":"Journal of Materials Science & Technology","volume":"3 1","pages":""},"PeriodicalIF":14.3000,"publicationDate":"2026-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science & Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.jmst.2026.04.010","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
To address growing computational demands, energy-efficient hardware technologies such as spintronics and neuromorphic computing have attracted significant interest. In particular, magneto-ionics offers a low-power, non-volatile approach to control magnetic properties, making it particularly suitable for manipulating antiferromagnetic (AFM) materials. In this work, we report magneto-ionic control of exchange bias (EB) in Mn1−xCoxN/Co with a compositionally tunable Néel temperature, TN. The high TN in MnN (> 650 K) typically necessitates high-temperature annealing, which triggers uncontrolled thermally induced ion-motion effects. Co addition to MnN reduces TN, enabling robust EB to be established after field cooling from 400 K, while preserving structural integrity. Importantly, EB can be subsequently tuned by voltage, up to a 30% enhancement observed at 100 K alongside an increase in saturation magnetization (up to ≈ 250 emu cm−3). Unlike previous works on similar single-layer nitrides, incorporating an additional ferromagnetic Co layer to form an AFM/ferromagnetic bilayer amplifies the voltage-induced effects. This work highlights the dual role of Co addition to MnN: (i) reducing the thermal requirements for setting EB by lowering TN, and (ii) enhancing electrical control of EB. These results represent a step forward towards the development of low-power voltage-controlled spintronic devices.
期刊介绍:
Journal of Materials Science & Technology strives to promote global collaboration in the field of materials science and technology. It primarily publishes original research papers, invited review articles, letters, research notes, and summaries of scientific achievements. The journal covers a wide range of materials science and technology topics, including metallic materials, inorganic nonmetallic materials, and composite materials.