The low-temperature sintering mechanism and high interconnection performance of pure silver nanowire films

IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Journal of Alloys and Compounds Pub Date : 2026-05-05 Epub Date: 2026-04-13 DOI:10.1016/j.jallcom.2026.187994
Dongyang Zhuang , Naiqian Wang , Jinghan Yang , Fengya Liu , Tao Peng , Yan Long
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引用次数: 0

Abstract

Nano-silver materials are critical for advanced packaging due to their low-temperature sinter ability and high-temperature stability, effectively resolving heat dissipation and reliability issues in high-power and third-generation semiconductor devices. However, conventional silver pastes suffer from high organic content, limited thermal conductivity, and low shear strength. To overcome these limitations, this study proposes a high-performance interconnect material based on pure silver nanowires (AgNWs). By controlling nucleation conditions, AgNWs with three diameters, 40 nm, 60 nm, and 80 nm, were synthesized and processed into organic additive-free silver films. Through thermal analysis, microstructural characterization, and performance testing, the influence of nanowire diameter on sintering kinetics, structural evolution, and final properties was systematically investigated. Experimental results demonstrate that thinner AgNWs (40 nm) exhibit superior low-temperature sintering activity, characterized by a lower initial sintering temperature (193 ℃) and apparent sintering activation energy (71 kJ·mol⁻¹). The sintering of the AgNW films undergoes distinct stages: neck formation, spheroidization and transformation into a beaded structure driven by Rayleigh instability, and coarsening dominated by Ostwald ripening, with atomic migration primarily governed by surface diffusion. Thinner AgNWs favor achieving high electrical/thermal conductivity (thermal conductivity of Film 40 >300 W·m⁻¹·K⁻¹), while thicker AgNWs contribute to constructing high-strength connections (shear strength of Film 60/80 >100 MPa). The prepared AgNW films contain an extremely low removable organic residue (<0.5%), effectively avoiding the hindrance of organics during sintering and their detrimental effects on final performance, thereby enabling high-strength and high-thermal-conductivity interconnects. This study offers new insights into understanding the sintering behavior of one-dimensional silver nanomaterials, providing a novel material option for developing advanced electrical packaging and interconnect technologies suitable for high-temperature, high-power, and large-scale devices.
纯银纳米线薄膜的低温烧结机理及高互连性能
纳米银材料因其低温烧结能力和高温稳定性而成为先进封装的关键,有效解决大功率和第三代半导体器件的散热和可靠性问题。然而,传统的银浆遭受高有机含量,有限的导热性和低剪切强度。为了克服这些限制,本研究提出了一种基于纯银纳米线(AgNWs)的高性能互连材料。通过控制成核条件,合成了直径为40nm、60nm和80nm的AgNWs,并将其加工成无添加剂的有机银膜。通过热分析、显微组织表征和性能测试,系统研究了纳米线直径对烧结动力学、结构演变和最终性能的影响。实验结果表明,较薄的AgNWs (40nm)具有较低的初始烧结温度(193℃)和表观烧结活化能(71kJ·mol⁻¹),具有较好的低温烧结活性。AgNW薄膜的烧结过程经历了不同的阶段:由瑞利不稳定性驱动的颈状形成、球化和向珠状结构转变,以及以奥斯特瓦尔德成熟为主的粗化,原子迁移主要受表面扩散控制。较薄的AgNWs有助于实现高的电/热传导性(薄膜的导热性为40 >;300W·m(⁻¹·K⁻)),而较厚的AgNWs有助于建立高强度的连接(薄膜的剪切强度为60/80 >;100MPa)。制备的AgNW薄膜含有极低的可去除有机残留物(<0.5%),有效地避免了烧结过程中有机物的阻碍及其对最终性能的不利影响,从而实现了高强度和高导热性的互连。该研究为理解一维银纳米材料的烧结行为提供了新的见解,为开发适用于高温、大功率和大型设备的先进电子封装和互连技术提供了一种新的材料选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Alloys and Compounds
Journal of Alloys and Compounds 工程技术-材料科学:综合
CiteScore
11.10
自引率
14.50%
发文量
5146
审稿时长
67 days
期刊介绍: The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.
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