Fast-Locking Frequency-Hopping PLL Using Dual-Edge Low-Duty-Cycle PFD With Cycle Slip Suppression

IF 1.8 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Afifeh Ghaemnia, Jincheng Yang, Xiaojiong Fei, Guoqiang Zhang
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引用次数: 0

Abstract

The performance of conventional phase–frequency detectors (PFDs) is critically limited by dead-zone and blind-zone artifacts, which stem from the timing constraints of D flip-flop (DFF) based architectures. These non-idealities degrade phase-detection resolution, induce cycle slip, and prolong the lock time of phase-locked loops (PLLs). This paper introduces a dual-edge low-duty-cycle PFD (DELD–PFD) that utilizes high-speed feed-through and output-prediction logic flip-flops to detect both rising and falling edges of the input clocks, thereby eliminating the dead and blind zones and enhancing phase resolution. The proposed architecture inherently generates low-duty-cycle output pulses, which reduces charge-pump current mismatch and improves loop dynamics. Fabricated in a standard 55 nm CMOS technology, the post-layout simulation results validate operation across 1 MHz–5.5 GHz. The DELD–PFD achieves a lock-time reduction of 63% relative to a conventional PLL, consumes 74 µW at 5 GHz from a 1.2 V supply, and delivers a phase noise of –147 dBc/Hz at a 1 MHz offset. Comprehensive Monte Carlo and PVT (process, voltage, and temperature) simulations confirm robustness across variations, demonstrating the design’s suitability for high-speed, low-noise, frequency-hopping PLL applications.

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采用带周跳抑制的双边低占空比PFD的快速锁定跳频锁相环
由于D触发器(DFF)结构的时序限制,传统的相频检测器(pfd)的性能受到死区和盲区伪影的严重限制。这些非理想性降低了相位检测分辨率,诱发周期滑移,延长了锁相环的锁定时间。本文介绍了一种双边低占空比PFD (DELD-PFD),它利用高速馈通和输出预测逻辑触发器检测输入时钟的上升沿和下降沿,从而消除了死区和盲区,提高了相位分辨率。该结构固有地产生低占空比输出脉冲,从而减少了电荷泵电流失配并改善了环路动力学。采用标准55纳米CMOS技术制造,布局后仿真结果验证了在1 MHz-5.5 GHz范围内的运行。与传统锁相环相比,DELD-PFD的锁相时间缩短了63%,在1.2 V电源下的5 GHz功耗为74 μ W,在1 MHz偏移时的相位噪声为-147 dBc/Hz。全面的蒙特卡罗和PVT(过程、电压和温度)模拟证实了各种变化的鲁棒性,证明了该设计适用于高速、低噪声、跳频锁相环应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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