First Flexible All-Perovskite Tandem Minimodule Using Au-Free Recombination Junction

IF 3.9 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Amina Labiod, Polyxeni Tsoulka, Cyril Leon, Jules Allegre, Solenn Berson
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Abstract

All-perovskite tandem devices are widely studied, as they ensure to overcome the limitations of single-junction devices. However, scaling up the technology into modules on the flexible substrates is a key challenge for commercialization. In this work, strategies are combined to fabricate monolithic 2-terminal all-perovskite tandem (M2TAPT) minimodules on flexible substrates. A methylammonium (MA, CH3NH3+)-free perovskite formulation leading to a bandgap (Eg) of 1.73 eV is selected and successfully deposited on the flexible substrate. In order to avoid shunts at the interconnections in modules, a thin indium tin oxide recombination layer with high lateral resistivity is developed by DC sputtering. The solvent-barrier property is assisted by a uniform and dense tin oxide (SnO2) buffer layer grown by atomic layer deposition. Regarding the interconnections of the cells, an appropriate laser scribing process is established in order to achieve a selective and clean removal without affecting the tandem stack. Finally, M2TAPT minimodules are successfully developed on flexible substrates with a geometrical fill factor of 93.8%. A power conversion efficiency of 15.9% is achieved on an active area of 11 cm2 with a steady-state efficiency of 15.2% measured after one week of dark storage in the glovebox.

Abstract Image

Abstract Image

首个使用无金复合结的柔性全钙钛矿串联微型模块
全钙钛矿串联器件由于克服了单结器件的局限性而受到广泛的研究。然而,将技术扩展到柔性基板上的模块是商业化的关键挑战。在这项工作中,将策略结合起来在柔性衬底上制造单片2端全钙钛矿串联(M2TAPT)微型模块。选择了一种不含甲基铵(MA, CH3NH3+)的钙钛矿配方,其带隙(Eg)为1.73 eV,并成功地沉积在柔性衬底上。为了避免模块互连处的分流,采用直流溅射技术制备了具有高横向电阻率的氧化铟锡复合层。通过原子层沉积形成均匀致密的氧化锡(SnO2)缓冲层,提高了材料的溶剂阻隔性能。对于单元的互连,建立了适当的激光划刻工艺,以便在不影响串联堆栈的情况下实现选择性和清洁的去除。最后,在柔性基板上成功开发出几何填充系数为93.8%的m2tpt微型模块。在11平方厘米的有效面积上实现了15.9%的功率转换效率,在手套箱中黑暗储存一周后测量的稳态效率为15.2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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