Coupling effect between interface orientation and loading direction on the interface structure and evolution of Cu/Ag nanolayered composites: a molecular dynamics study.

IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Yiran Chi, Yongnan Xiong, Xing Luo, Chunlei Gan, Defeng Guo, Pengjiang He, Zhibo Zhang
{"title":"Coupling effect between interface orientation and loading direction on the interface structure and evolution of Cu/Ag nanolayered composites: a molecular dynamics study.","authors":"Yiran Chi, Yongnan Xiong, Xing Luo, Chunlei Gan, Defeng Guo, Pengjiang He, Zhibo Zhang","doi":"10.1088/1361-6528/ae5aa7","DOIUrl":null,"url":null,"abstract":"<p><p>This study investigates the coupling effect of interface orientation and loading direction on the interface structure and evolution of Cu/Ag nanolayered composites by employing molecular dynamics simulations. Four distinct interface configurations Cu(001)/Ag(001), Cu(11¯0)/Ag(11¯0), Cu(111)/Ag(111) and Cu(112¯)/Ag(112¯) were subjected to tensile loading both perpendicular and parallel to the interface. Results show that the initial lattice mismatch leads to the formation of characteristic dislocation networks (square, triangular, and rectangular) at the interfaces, whose morphology is dictated by the specific orientation combination. The loading direction critically governs the subsequent defect nucleation and propagation pathways. Under perpendicular loading, dislocation nucleation preferentially initiates in the softer Ag layer before transmitting into the Cu layer. In contrast, parallel loading promotes dislocation emission directly from the interface into both adjacent layers, with the Cu side often exhibiting more rapid plastic development. The mechanical response and the evolution of dislocation density, including the formation of sessile stair-rod dislocations, are strongly dependent on both the interface type and the loading axis. Furthermore, the implications of varying dislocation densities on electrical resistivity are discussed. This work provides atomic-scale insights into the coupling effect of interface structure and loading condition, offering guidance for the interfacial design and processing of high-strength, high-conductivity layered composites.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2026-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ae5aa7","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

This study investigates the coupling effect of interface orientation and loading direction on the interface structure and evolution of Cu/Ag nanolayered composites by employing molecular dynamics simulations. Four distinct interface configurations Cu(001)/Ag(001), Cu(11¯0)/Ag(11¯0), Cu(111)/Ag(111) and Cu(112¯)/Ag(112¯) were subjected to tensile loading both perpendicular and parallel to the interface. Results show that the initial lattice mismatch leads to the formation of characteristic dislocation networks (square, triangular, and rectangular) at the interfaces, whose morphology is dictated by the specific orientation combination. The loading direction critically governs the subsequent defect nucleation and propagation pathways. Under perpendicular loading, dislocation nucleation preferentially initiates in the softer Ag layer before transmitting into the Cu layer. In contrast, parallel loading promotes dislocation emission directly from the interface into both adjacent layers, with the Cu side often exhibiting more rapid plastic development. The mechanical response and the evolution of dislocation density, including the formation of sessile stair-rod dislocations, are strongly dependent on both the interface type and the loading axis. Furthermore, the implications of varying dislocation densities on electrical resistivity are discussed. This work provides atomic-scale insights into the coupling effect of interface structure and loading condition, offering guidance for the interfacial design and processing of high-strength, high-conductivity layered composites.

界面取向和加载方向对Cu/Ag纳米复合材料界面结构和演化的耦合效应:分子动力学研究。
本文采用分子动力学方法研究了界面取向和加载方向对Cu/Ag纳米层复合材料界面结构和演化的耦合效应。Cu(001)/Ag(001)、Cu(11′0)/Ag(11′0)、Cu(111)/Ag(111)和Cu(112′0)/Ag(112′0)四种不同的界面形态分别受到垂直和平行于界面的拉伸载荷。结果表明,初始晶格错配导致界面处形成特征性的位错网络(方形、三角形和矩形),其形态由特定的取向组合决定。加载方向对随后的缺陷形核和扩展路径起关键作用。在垂直加载下,位错首先在软银层开始形核,然后向Cu层扩散。相反,平行加载促进位错直接从界面发射到相邻两层,Cu侧往往表现出更快的塑性发展。界面类型和加载轴对力学响应和位错密度的演化有很强的依赖性,其中包括2 / 30的固相阶梯位错的形成。此外,还讨论了不同位错密度对电阻率的影响。本研究在原子尺度上深入研究了界面结构与加载条件的耦合效应,为高强度、高导电性层状复合材料的界面设计和加工提供了指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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