Tuning the Isoelectronic Trap States in Ni-doped ZnO Thin Films for Enhanced and Controllable Visible Photoluminescence

IF 3.2 3区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Physica B-condensed Matter Pub Date : 2026-03-30 DOI:10.1016/j.physb.2026.418598

Pan Yi , Yinlong Chen , Yucan Chen , WenJing Zhao , Binbing Zhang , Guangye Fan , Ruijin Hu , Feng Xu , Yuxue Zhou , Shaobo Zhang , Xiangdong Meng

{"title":"Tuning the Isoelectronic Trap States in Ni-doped ZnO Thin Films for Enhanced and Controllable Visible Photoluminescence","authors":"Pan Yi , Yinlong Chen , Yucan Chen , WenJing Zhao , Binbing Zhang , Guangye Fan , Ruijin Hu , Feng Xu , Yuxue Zhou , Shaobo Zhang , Xiangdong Meng","doi":"10.1016/j.physb.2026.418598","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, we investigated the effects of nickel (Ni) doping on the crystal structure, surface morphology and defect characteristics of ZnO films using spin coating method. X-ray diffraction (XRD) analysis revealed that all Ni-doped ZnO thin films exhibit a preferential (002) orientation. X-ray photoelectron spectroscopy (XPS) further confirmed that Ni<sup>2+</sup> ions successfully substitute for Zn<sup>2+</sup> sites, inducing lattice contraction. The Photoluminescence (PL) study revealed that Ni doping completely suppressed the intrinsic ultraviolet emission and induced three characteristic emission peaks in the visible light region. It was found that the 3% doped sample exhibited the optimal luminescence performance, with the visible light emission intensity increasing by three times. This was attributed to the synergistic effect of the isoelectronic traps and intrinsic point defects. When the doping concentration exceeded 3%, concentration quenching occurred due to the reduction in defect spacing.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"733 ","pages":"Article 418598"},"PeriodicalIF":3.2000,"publicationDate":"2026-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S092145262600356X","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

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Abstract

In this paper, we investigated the effects of nickel (Ni) doping on the crystal structure, surface morphology and defect characteristics of ZnO films using spin coating method. X-ray diffraction (XRD) analysis revealed that all Ni-doped ZnO thin films exhibit a preferential (002) orientation. X-ray photoelectron spectroscopy (XPS) further confirmed that Ni²⁺ ions successfully substitute for Zn²⁺ sites, inducing lattice contraction. The Photoluminescence (PL) study revealed that Ni doping completely suppressed the intrinsic ultraviolet emission and induced three characteristic emission peaks in the visible light region. It was found that the 3% doped sample exhibited the optimal luminescence performance, with the visible light emission intensity increasing by three times. This was attributed to the synergistic effect of the isoelectronic traps and intrinsic point defects. When the doping concentration exceeded 3%, concentration quenching occurred due to the reduction in defect spacing.

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调整ni掺杂ZnO薄膜的等电子阱态以增强可控可见光发光

本文采用自旋镀膜方法研究了镍（Ni）掺杂对ZnO薄膜晶体结构、表面形貌和缺陷特性的影响。x射线衍射（XRD）分析表明，所有ni掺杂ZnO薄膜都表现出优先（002）取向。x射线光电子能谱（XPS）进一步证实，Ni2+离子成功取代了Zn2+位，引起晶格收缩。光致发光（PL）研究表明，Ni掺杂完全抑制了本征紫外发射，并在可见光区诱导了三个特征发射峰。结果表明，掺量为3%的样品表现出最佳的发光性能，其可见光发射强度提高了3倍。这归因于等电子陷阱和本征点缺陷的协同作用。当掺杂浓度超过3%时，由于缺陷间距减小而发生浓度猝灭。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Physica B-condensed Matter 物理-物理：凝聚态物理

CiteScore

4.90

自引率

7.10%

发文量

703

审稿时长

44 days

期刊介绍： Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces