Indium selenides for next-generation low-power computing devices

Abstract

As silicon-based computing approaches fundamental physical limits in energy efficiency, speed and density, the search for complementary materials beyond silicon-based technology has intensified. In this Perspective, we examine van der Waals indium selenides — particularly InSe and In2Se3 — as promising candidates for next-generation low-power electronics. Indium selenides exhibit exceptional electron mobility exceeding 1,000 cm2 V–1 s–1, high thermal velocity of >2 × 107 cm s–1, thickness-tunable bandgaps of 0.97–2.5 eV and unique phase-dependent ferroelectric properties, enabling both high-performance logic and non-volatile memory functions within a single material system. This Perspective critically evaluates the materials properties, fabrication challenges and device applications of indium selenides, examining their potential to surpass silicon in ultra-scaled transistors through ballistic transport while simultaneously offering ferroelectric memory capabilities impossible in conventional semiconductors. We analyse breakthroughs in ballistic InSe transistors, tunnel field-effect transistors and In2Se3-based ferroelectric devices for information storage, and identify key research priorities for addressing persistent challenges in scalable synthesis, phase control and oxidation prevention. By bridging fundamental materials science with practical device engineering, we provide a roadmap for translating the exceptional properties of indium selenides into commercially viable, low-power computing technologies that can overcome the limitations of silicon while enabling novel computing architectures. Indium selenides, InSe and In2Se3, exhibit high electron mobility, high thermal velocity, thickness-tunable bandgaps and unique phase-dependent ferroelectric properties. Addressing their challenges of scalable synthesis, phase control and oxidation could be the basis for next-generation, low-power computing.