Substrate-field-modulated remote-van der Waals hybrid epitaxy in transition metal dichalcogenide heterostructures

IF 13.8 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nano Convergence Pub Date : 2026-03-28 DOI:10.1186/s40580-026-00542-4

Lia Saptini Handriani, Suhee Jang, Yelim Kim, Hyuncheol Yun, Dae Yeop Jeong, Hyeonsu Park, Zhe Gao, Jae-il Jang, Won Il Park

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引用次数: 0

Abstract

Two-dimensional (2D) transition-metal dichalcogenide (TMDC) heterostructures are promising for next-generation optoelectronics, yet the mechanisms controlling their vertical heteroepitaxy remain poorly understood. Here, we systematically investigate metal–organic chemical vapor deposition growth of MoS₂/WS₂ and WS₂/MoS₂ vertical heterostructures across varying interlayer thicknesses (monolayer to multilayer) and substrates (Si, SiO₂ and c-sapphire). We identify a substrate-field-modulated “remote–van der Waals (vdW) hybrid epitaxy” regime, in which vertical overgrowth is confined to a narrow thickness window (~ 1–3 layers), with nucleation density strongly influenced by substrate polarity and defect chemistry. High-resolution STEM reveals that, in the regions where vertical growth occurs, the in-plane crystallographic registry is primarily governed by vdW coupling to the 2D template, yielding a highly preferred single-orientation registry across the examined regions for both stacking orders. This dual-control mechanism decouples growth propensity from epitaxial alignment, providing a scalable framework for synthesizing high-quality 2D vertical heterostructures with precisely engineered interfaces.

Graphical abstract

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过渡金属二硫化物异质结构中的衬底场调制远端范德瓦尔斯杂化外延

二维（2D）过渡金属二硫化物（TMDC）异质结构在下一代光电子学中很有前景，但控制其垂直异质外延的机制仍然知之甚少。在这里，我们系统地研究了MoS2/WS2和WS2/MoS2垂直异质结构在不同层间厚度（单层到多层）和衬底（Si， SiO2和c-蓝宝石）上的金属有机化学气相沉积生长。我们发现了一个基底场调制的“远端范德瓦尔斯（vdW）杂化外延”机制，其中垂直过度生长被限制在一个狭窄的厚度窗口（~ 1-3层），成核密度受到基底极性和缺陷化学的强烈影响。高分辨率STEM表明，在垂直生长发生的区域，平面内晶体注册主要由vdW耦合到2D模板控制，在两个堆叠顺序的检查区域中产生高度优选的单方向注册。这种双重控制机制将生长倾向与外延排列解耦，为合成具有精确工程界面的高质量二维垂直异质结构提供了可扩展的框架。图形抽象

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来源期刊

Nano Convergence Engineering-General Engineering

CiteScore

15.90

自引率

2.60%

发文量

审稿时长

13 weeks

期刊介绍： Nano Convergence is an internationally recognized, peer-reviewed, and interdisciplinary journal designed to foster effective communication among scientists spanning diverse research areas closely aligned with nanoscience and nanotechnology. Dedicated to encouraging the convergence of technologies across the nano- to microscopic scale, the journal aims to unveil novel scientific domains and cultivate fresh research prospects. Operating on a single-blind peer-review system, Nano Convergence ensures transparency in the review process, with reviewers cognizant of authors' names and affiliations while maintaining anonymity in the feedback provided to authors.