Nanometer scale thermal measurement for next-generation electronics via scanning Joule expansion microscopy

IF 7.1
Chip Pub Date : 2026-03-01 Epub Date: 2025-06-14 DOI:10.1016/j.chip.2025.100156
Baoshi Qiao , Qihai Jiang , Zhiyao Zheng , Yang Xu , Huan Hu
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引用次数: 0

Abstract

As semiconductor devices continue to scale down, increasing power densities introduce significant thermal management challenges. High-resolution thermal imaging is crucial for understanding localized heating and ensuring device reliability. Scanning Joule expansion microscopy (SJEM) has emerged as a powerful technique for nanoscale thermal characterization, offering high spatial and temperature resolution without the need for specialized thermal sensors. This review explores SJEM’s fundamental principles, historical advancements, and critical applications, including thermoelectric effects, current crowding, and conductive filament analysis. We further discuss the challenges and future opportunities in SJEM, such as enhancing the mechanistic understanding of thermal strain, developing specialized atomic force microscope probes, enabling real-time probe manipulation, integrating AI-driven analysis, and extending SJEM to low-temperature physics studies. As semiconductor technology advances, SJEM is expected to play an essential role in thermal failure analysis, nanoelectronics, and nanoscale energy transport research.
扫描焦耳膨胀显微镜用于下一代电子器件的纳米级热测量
随着半导体器件的不断缩小,功率密度的增加带来了重大的热管理挑战。高分辨率热成像对于了解局部加热和确保设备可靠性至关重要。扫描焦耳膨胀显微镜(SJEM)已成为纳米级热表征的强大技术,无需专门的热传感器即可提供高空间和温度分辨率。本文综述了SJEM的基本原理、历史进展和关键应用,包括热电效应、电流拥挤和导电丝分析。我们进一步讨论了SJEM面临的挑战和未来的机遇,如加强对热应变的机理理解,开发专门的原子力显微镜探针,实现实时探针操作,集成人工智能驱动的分析,以及将SJEM扩展到低温物理研究。随着半导体技术的进步,SJEM有望在热失效分析、纳米电子学和纳米尺度能量输运研究中发挥重要作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
2.80
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0.00%
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