Growth and characterization of Bi0.47Na0.47Ba0.06Ti0.98Fe0.02O3 lead-free piezoelectric crystals via Bridgman method

IF 2.5 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2026-06-01 Epub Date: 2026-03-08 DOI:10.1016/j.jcrysgro.2026.128571

Jiangtao Fan , Junjie Chen , Zhanggui Hu , Yicheng Wu

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引用次数: 0

Abstract

High-performance lead-free piezoelectric single crystals are urgently needed materials for next-generation actuators and transducers. In this study, the Bi_0.47Na_0.47Ba_0.06Ti_0.98Fe_0.02O₃ single crystals were successfully grown using the Bridgman method. The phase structure was found to be a coexistence of R3c and P4bm structures. The Bi_0.47Na_0.47Ba_0.06Ti_0.98Fe_0.02O₃ exhibited a piezoelectric coefficient (d₃₃) of 173 pC/N. Additionally, the single crystal exhibits substantial maximum polarization (P_max) of approximately 45 μC/cm²and residual polarization (P_r) of about 38 μC/cm². Upon heating from 25°C to 100°C, the electric field induced strain increases from 0.27% to 0.34%. This outstanding performance can be attributed to the presence of morphotropic phase boundary (MPB), the coexistence of rhombohedral and tetragonal phases, and the synergistic effects of defect dipoles and local nanodomains. The lead-free piezoelectric ceramic concept explored in this study offers a promising strategy for investigating and developing next-generation lead-free piezoelectric materials.

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Bridgman法生长Bi0.47Na0.47Ba0.06Ti0.98Fe0.02O3无铅压电晶体及表征

高性能无铅压电单晶是下一代执行器和换能器急需的材料。在本研究中，采用Bridgman方法成功地生长了Bi0.47Na0.47Ba0.06Ti0.98Fe0.02O3单晶。发现相结构为R3c和P4bm结构共存。Bi0.47Na0.47Ba0.06Ti0.98Fe0.02O3的压电系数d33为173 pC/N。此外，单晶的最大极化（Pmax）约为45 μC/cm2，剩余极化（Pr）约为38 μC/cm2。从25℃加热到100℃，电场诱导应变从0.27%增加到0.34%。这种优异的性能可归因于形态取向相边界（MPB）的存在、菱形和四方相的共存以及缺陷偶极子和局部纳米畴的协同效应。本研究探索的无铅压电陶瓷概念为研究和开发下一代无铅压电材料提供了一个有希望的策略。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.