Self-powered Ge2Sb2Te5 on n-Si photodiode for UV–Vis detection fabricated by Pulsed Laser Deposition

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Optical Materials Pub Date : 2026-06-01 Epub Date: 2026-02-03 DOI:10.1016/j.optmat.2026.117930

Bhavna Thakur, Anirban Mitra, Rajesh Kumar

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引用次数: 0

Abstract

The self-powered photodiode operates at zero bias and is highly appealing because of its autonomous function without an external source, which makes it sustainable and ideal for eco-friendly uses. The primary objective of this study is to investigate the self-powered heterojunction device composed of p-type crystalline

{Ge}_{2} {Sb}_{2} {Te}_{5}

(cGST) and n-type silicon (n-Si), where the cGST thin film is deposited using the Pulsed Laser Deposition (PLD) technique. The

I

–

V

characteristics of the heterojunction were measured under dark and using LED light sources with different wavelengths (365, 455, and 735 nm) under constant illumination power. The ideality factor (

η

) was found to be 4.51, under dark condition. Under the self-powered mode, the photodiode exhibited a maximum responsivity (R) of 1.78 mA/W and a detectivity (

D^{*}

) of 5.34

\times

1 0^{9}

Jones under illumination with 735 nm wavelength light. The photodiode showed responsivity of 29.15 mA/W under an applied reverse bias of

-

3 V with a source wavelength of 735 nm. The response time of the device was measured on the order of milliseconds. This work reports for the first time the calculation of key parameters such as junction width (W), response time, noise equivalent power (NEP), and external quantum efficiency (EQE) for the cGST/n-Si self-powered heterojunction device.

Abstract Image

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脉冲激光沉积制备用于紫外可见检测的n-Si自供电Ge2Sb2Te5光电二极管

这种自供电的光电二极管工作在零偏压下，由于其自主功能而不需要外部电源，因此非常吸引人，这使得它具有可持续性，是环保用途的理想选择。本研究的主要目的是研究由p型晶体Ge2Sb2Te5 （cGST）和n型硅（n-Si）组成的自供电异质结器件，其中cGST薄膜采用脉冲激光沉积（PLD）技术沉积。在恒定照明功率下，在黑暗和不同波长的LED光源（365、455和735 nm）下测量了异质结的I-V特性。在暗条件下，理想因子η为4.51。在自供电模式下，在735 nm波长光照射下，光电二极管的最大响应度(R)为1.78 mA/W，探测率（D∗）为5.34 × 109 Jones。在−3 V的反向偏压和735 nm的源波长下，光电二极管的响应率为29.15 mA/W。该设备的响应时间以毫秒为单位进行测量。本文首次报道了cGST/n-Si自供电异质结器件的结宽(W)、响应时间、噪声等效功率（NEP）和外量子效率（EQE）等关键参数的计算。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical Materials 工程技术-材料科学：综合

CiteScore

6.60

自引率

12.80%

发文量

1265

审稿时长

38 days

期刊介绍： Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials. OPTICAL MATERIALS focuses on: • Optical Properties of Material Systems; • The Materials Aspects of Optical Phenomena; • The Materials Aspects of Devices and Applications. Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.