Vijay Singh, MOHD Musaib Haidari, Ji Bong Joo, S. Watanabe, T. K. Gundu Rao
{"title":"Photoluminescence and EPR Study of the Local Environment of Gd3+ in SrAl4O7 UVB Phosphors","authors":"Vijay Singh, MOHD Musaib Haidari, Ji Bong Joo, S. Watanabe, T. K. Gundu Rao","doi":"10.1007/s11664-026-12703-6","DOIUrl":null,"url":null,"abstract":"<div><p>Phosphor materials play a crucial role in the advancement of optical technologies. In this study, SrAl<sub>4</sub>O<sub>7</sub>:xGd<sup>3+</sup> (<i>x</i> = 0.01–0.11 mol) phosphors are synthesized using the combustion method, and their structural, morphological, and optical properties are examined. X-ray diffraction analysis confirms that the phosphors crystallize in the monoclinic <i>C</i>2/<i>c</i> space group. Photoluminescence spectroscopy indicates well-defined intra-configurational 4f–4f transitions of Gd<sup>3+</sup> ions, with prominent emission peaks at 308 nm and 314 nm, corresponding to the <sup>6</sup>P<sub>5/2</sub> → <sup>8</sup>S<sub>7/2</sub> and <sup>6</sup>P<sub>7/2</sub> → <sup>8</sup>S<sub>7/2</sub> transitions, respectively. The luminescence intensity is optimized at a Gd<sup>3+</sup> concentration of 0.09 mol. The electron paramagnetic resonance spectra of SrAl<sub>4</sub>O<sub>7</sub>:Gd<sup>3+</sup> phosphors exhibit a prominent resonance line at an effective <i>g</i>-factor of approximately 1.97, accompanied by weaker signals in the low-field region. Two distinct Gd<sup>3+</sup> sites with differing local environments contribute to the observed spectrum. These environmental variations arise from charge-compensating Sr<sup>2+</sup> vacancies or interstitial O<sup>2−</sup> ions and their proximity to Gd<sup>3+</sup> ions. The findings highlight the potential of Gd<sup>3+</sup>-doped SrAl<sub>4</sub>O<sub>7</sub> for advanced UV photonic applications, particularly in dermatological phototherapy, where precise control over emission properties is crucial.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3739 - 3747"},"PeriodicalIF":2.5000,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-026-12703-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Phosphor materials play a crucial role in the advancement of optical technologies. In this study, SrAl4O7:xGd3+ (x = 0.01–0.11 mol) phosphors are synthesized using the combustion method, and their structural, morphological, and optical properties are examined. X-ray diffraction analysis confirms that the phosphors crystallize in the monoclinic C2/c space group. Photoluminescence spectroscopy indicates well-defined intra-configurational 4f–4f transitions of Gd3+ ions, with prominent emission peaks at 308 nm and 314 nm, corresponding to the 6P5/2 → 8S7/2 and 6P7/2 → 8S7/2 transitions, respectively. The luminescence intensity is optimized at a Gd3+ concentration of 0.09 mol. The electron paramagnetic resonance spectra of SrAl4O7:Gd3+ phosphors exhibit a prominent resonance line at an effective g-factor of approximately 1.97, accompanied by weaker signals in the low-field region. Two distinct Gd3+ sites with differing local environments contribute to the observed spectrum. These environmental variations arise from charge-compensating Sr2+ vacancies or interstitial O2− ions and their proximity to Gd3+ ions. The findings highlight the potential of Gd3+-doped SrAl4O7 for advanced UV photonic applications, particularly in dermatological phototherapy, where precise control over emission properties is crucial.
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.