Modeling and simulation of GaInAsN/GaAs MOS-HEMT for rapid detection in biosensor applications

Abstract

High Electron Mobility Transistors (HEMTs) technology is being explored for the development of biosensors. While numerous floating gate HEMT-based biosensors have been experimentally developed, limited research exists on the modeling of MOSHEMT-based biosensors. In this work, an analytical model for an GaInAsN/GaAs MOSHEMT biosensor is presented for the first time, aimed at detecting biomolecules such as proteins, streptavidin, ChOx, and uricase using a dielectric modulation approach. The study focuses on detecting change in drain current for different biomolecules. Simulations of the proposed MOSHEMT structure were carried out using the SILVCO ATLAS TCAD device simulator. The simulation results show significant variations in the drain current and threshold voltage due to changes in the biomolecules within the cavity region. The threshold voltage experiences the highest positive shift for uricase, attributed to its low dielectric constant. The outcomes of the analytical model have been validated, showing strong agreement with the simulated results.