Irreversible expansion and distortion relief of bismuth ruthenate under high temperature and high pressure

IF 1.8 4区 物理与天体物理 Q3 PHYSICS, APPLIED
Xinmiao Gai, Cun You, Yu-Qi Gao, Z.W. Li, Hetian Liu, Wei Zhao, Pinwen Zhu, Xin Wang
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引用次数: 1

Abstract

Bi2Ru2O7 is a weak metal pyrochlore with good conductivity. Due to the static disordered displacement caused by the Bi 6s lone pair, which distorts the [RuO6] octahedron, the t2g orbitals split into e'g and a1g states. This results in the opening of a bandgap at the Fermi level, leading to reduced electrical conductivity in the sample compared to its standard structure. The electrical resistivity, temperature difference, and Seebeck coefficient of the sample were synchronously observed using high-temperature and high-pressure in situ testing assembly. The Seebeck coefficient and temperature discontinuity of the sample occurred at 4.0 GPa at 878.9 K, and the final value of resistivity showed a significant decrease after returning to ambient temperature at 4.0 GPa, but remained within the range of 10−4 Ω m. The x-ray diffraction (XRD) analysis after high-temperature and high-pressure treatment confirmed that the sample underwent irreversible expansion at 4.0 GPa at 878.9 K. In situ high-temperature XRD indicates that irreversible expansion of the sample cannot be achieved by high-temperature treatment at ambient pressure. High-temperature and high-pressure treatment effectively expands the atomic spacing, which can alleviate the displacement of shared oxygen in [RuO6] octahedra caused by the Bi 6s lone pair, reduce octahedral distortion, and thus improve the semi-metallic bandgap caused by static disordered displacement, which provides a new idea for improving the performance of bismuth ruthenate and its composite electrode materials. In addition, expansion is beneficial for the replacement process of the sample as a matrix material, indicating its potential application value in the field of nuclear waste solidification and as a doped matrix material.
高温高压下钌酸铋的不可逆膨胀和畸变解除
Bi2Ru2O7是一种导电性好的弱金属焦绿石。由于bi6s孤对引起的静态无序位移使[RuO6]八面体变形,使t2g轨道分裂为e'g和a1g态。这导致在费米能级上打开一个带隙,导致与标准结构相比,样品中的导电性降低。采用高温高压原位测试装置同步观测样品的电阻率、温度差和塞贝克系数。高温高压处理后的x射线衍射(XRD)分析证实,在878.9 K下,样品在4.0 GPa处发生了不可逆膨胀,Seebeck系数和温度不连续现象出现在4.0 GPa处,在4.0 GPa处恢复到环境温度后电阻率最终值明显减小,但仍保持在10−4 Ω m范围内。原位高温XRD分析表明,常温下高温处理不能使样品发生不可逆膨胀。高温高压处理有效地扩大了原子间距,可以缓解bi6s孤对引起的[RuO6]八面体中共享氧的位移,减少八面体畸变,从而改善静态无序位移引起的半金属带隙,为提高钌酸铋及其复合电极材料的性能提供了新的思路。此外,膨胀有利于样品作为基体材料的置换过程,表明其在核废料固化领域和作为掺杂基体材料方面具有潜在的应用价值。
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来源期刊
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 物理-物理:应用
CiteScore
3.00
自引率
26.70%
发文量
818
审稿时长
3.5 months
期刊介绍: The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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