A High Temperature–Voltage Sensitivity 2-Transistor Voltage Reference With Wide Range Operation

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Electronics Letters Pub Date : 2026-02-23 DOI:10.1049/ell2.70544

Myung-Hyun Jeon, Yeonsu Kim, Hyunyoung Yoo, Eunji Yoo, Jusung Kim, Min-Woo Kwon, Jae-Won Nam

{"title":"A High Temperature–Voltage Sensitivity 2-Transistor Voltage Reference With Wide Range Operation","authors":"Myung-Hyun Jeon, Yeonsu Kim, Hyunyoung Yoo, Eunji Yoo, Jusung Kim, Min-Woo Kwon, Jae-Won Nam","doi":"10.1049/ell2.70544","DOIUrl":null,"url":null,"abstract":"Measurement of the temperature in an integrated circuit (IC) is essential for evaluating temperature-dependent circuit performance. Using off-chip temperature sensors for this purpose has limited accuracy in sensing the on-chip temperature. For on-chip integration with ICs, a low-power and compact temperature sensor is required. Therefore, this letter presents a 2-Transistor (2T) voltage reference generator (VRG) that overcomes the limited sensitivity of conventional structures through the deep-subthreshold operation and achieves high <math>\n <semantics>\n <mi>T</mi>\n <annotation>$T$</annotation>\n </semantics></math>–<math>\n <semantics>\n <mi>V</mi>\n <annotation>$V$</annotation>\n </semantics></math> sensitivity by employing the narrow-width effect. The proposed 2T VRGs are implemented in 28-nm FD-SOI process and demonstrated to operate over a temperature range of 200 to 400 K, achieving a 0.86 mV/K <math>\n <semantics>\n <mi>T</mi>\n <annotation>$T$</annotation>\n </semantics></math>–<math>\n <semantics>\n <mi>V</mi>\n <annotation>$V$</annotation>\n </semantics></math> sensitivity with 3.6% relative inaccuracy.","PeriodicalId":11556,"journal":{"name":"Electronics Letters","volume":"62 1","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2026-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70544","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics Letters","FirstCategoryId":"5","ListUrlMain":"https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.70544","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Measurement of the temperature in an integrated circuit (IC) is essential for evaluating temperature-dependent circuit performance. Using off-chip temperature sensors for this purpose has limited accuracy in sensing the on-chip temperature. For on-chip integration with ICs, a low-power and compact temperature sensor is required. Therefore, this letter presents a 2-Transistor (2T) voltage reference generator (VRG) that overcomes the limited sensitivity of conventional structures through the deep-subthreshold operation and achieves high $T$ – $V$ sensitivity by employing the narrow-width effect. The proposed 2T VRGs are implemented in 28-nm FD-SOI process and demonstrated to operate over a temperature range of 200 to 400 K, achieving a 0.86 mV/K $T$ – $V$ sensitivity with 3.6% relative inaccuracy.

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一种工作范围宽的高温电压敏感双晶体管电压基准

测量集成电路（IC）中的温度对于评估温度相关电路的性能至关重要。使用片外温度传感器来检测片内温度的精度有限。为了与ic片上集成，需要一个低功耗和紧凑的温度传感器。因此，本文提出了一种2-晶体管（2T）电压参考发生器（VRG），它通过深亚阈值运算克服了传统结构的有限灵敏度，并利用窄宽度效应实现了高T$ T$ - V$ V$灵敏度。所提出的2T vrg在28纳米FD-SOI工艺中实现，并证明在200至400 K的温度范围内工作，实现0.86 mV/K T$ T$ - V$ V$灵敏度，相对误差为3.6%。

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来源期刊

Electronics Letters 工程技术-工程：电子与电气

CiteScore

2.70

自引率

0.00%

发文量

268

审稿时长

3.6 months

期刊介绍： Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews. Scope As a journal at the forefront of its field, Electronics Letters publishes papers covering all themes of electronic and electrical engineering. The major themes of the journal are listed below. Antennas and Propagation Biomedical and Bioinspired Technologies, Signal Processing and Applications Control Engineering Electromagnetism: Theory, Materials and Devices Electronic Circuits and Systems Image, Video and Vision Processing and Applications Information, Computing and Communications Instrumentation and Measurement Microwave Technology Optical Communications Photonics and Opto-Electronics Power Electronics, Energy and Sustainability Radar, Sonar and Navigation Semiconductor Technology Signal Processing MIMO