Mohammad Jobayer Hossain;Javery A. Mann;Amit Dikshit;Jin Wallner;Gerald J. Leake;Christopher V. Baiocco
{"title":"Low-Loss, Low-Crosstalk Arrayed Waveguide Grating on a 300 mm Silicon Photonics Platform","authors":"Mohammad Jobayer Hossain;Javery A. Mann;Amit Dikshit;Jin Wallner;Gerald J. Leake;Christopher V. Baiocco","doi":"10.1109/LPT.2026.3665778","DOIUrl":null,"url":null,"abstract":"We present a <inline-formula> <tex-math>$1\\times 13$ </tex-math></inline-formula> channel silicon nitride arrayed waveguide grating (AWG) fabricated on a 300 mm silicon photonics platform. The device operates across the C and L bands (1500–1620 nm) with a measured insertion loss of 0.92 dB and a crosstalk of –37.5 dB (median across 29 dies on the wafer). Each channel exhibits a 3 dB bandwidth of 118.6 GHz, with a channel spacing of 187 GHz. The free spectral range (FSR) of the AWG is 20 nm. The device footprint is compact, measuring 1.65 mm <inline-formula> <tex-math>$\\times 0.75$ </tex-math></inline-formula> mm. Fabrication was carried out using AIM Photonics’ 300 mm CMOS-compatible process at the Albany Nanotech Complex. This work presents the design, fabrication, and characterization of the AWG, including an analysis of die-to-die performance variations.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 10","pages":"691-694"},"PeriodicalIF":2.4000,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11397661/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We present a $1\times 13$ channel silicon nitride arrayed waveguide grating (AWG) fabricated on a 300 mm silicon photonics platform. The device operates across the C and L bands (1500–1620 nm) with a measured insertion loss of 0.92 dB and a crosstalk of –37.5 dB (median across 29 dies on the wafer). Each channel exhibits a 3 dB bandwidth of 118.6 GHz, with a channel spacing of 187 GHz. The free spectral range (FSR) of the AWG is 20 nm. The device footprint is compact, measuring 1.65 mm $\times 0.75$ mm. Fabrication was carried out using AIM Photonics’ 300 mm CMOS-compatible process at the Albany Nanotech Complex. This work presents the design, fabrication, and characterization of the AWG, including an analysis of die-to-die performance variations.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.