Beam voltage effects in the study of embedded biological materials by secondary electron detectors.

Scanning electron microscopy Pub Date : 1986-01-01
C Scala, G Pasquinelli, P Preda, R Laschi
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Abstract

Thin and semithin sections were extensively examined by the secondary electron (SE) detector in a conventional scanning electron microscope (SEM), and in a transmission electron microscope with a scanning attachment (STEM). Various parameters, in particular the beam voltage, were shown to affect the final SE image (SEI). As for SEM observation, a surface contrast was imaged at low primary electron (PE) voltages (0.6-2 kV), whereas a subsurface contrast predominated at higher energies (15-30 kV). In STEM, significant differences were not detected by varying the PE in the 20-100 kV range. Surface and subsurface information was simultaneously imaged even though the SEI were better resolved at the highest energy.

二次电子探测器在嵌入式生物材料研究中的束流电压效应。
在常规扫描电子显微镜(SEM)和带扫描附件的透射电子显微镜(STEM)中,用二次电子(SE)检测器对薄和半薄切片进行了广泛的检查。各种参数,特别是波束电压,显示影响最终SE图像(SEI)。在SEM观察中,低初级电子(PE)电压(0.6-2 kV)下的表面对比成像,而高能量(15-30 kV)下的次表面对比占主导地位。在STEM中,通过改变20-100 kV范围内的PE,未检测到显着差异。地表和地下信息同时成像,即使在最高能量下SEI分辨率更好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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