Joonsoo Byeon, Ha Yeon Choi, Ju Yong Shin, Seung Ri Jeong, Shivam Kumar Gautam, Hi-Deok Lee
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引用次数: 0
Abstract
Two-dimensional transition metal dichalcogenide (TMDC) materials have unique structural and chemical properties, which makes them suitable for next-generation devices. However, high contact resistance between TMDCs and metal contacts limits the device performance. Metallic 1 T phase at the interface facilitates charge injection and reduce the contact resistance. This study reports on a low-frequency Ar/O2 plasma technique for achieving a uniform and clean 2H → 1 T phase transition in MoS2, confirmed through Raman, PL, TEM and XPS measurements. Furthermore, this study demonstrates that oxygen-based treatment can form MoO bonds and create a uniform surface, thereby passivating the defects present on the MoS2 surface, as analyzed by XPS and AFM. This research opens up new possibilities for phase transition techniques, suggesting that they can enhance the contact properties between MoS2 and metals, thereby improving device characteristics.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
• Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
• Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart
• Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction
• Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots.
• Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing.
• Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive