Device Engineering of a New Lead Free All Inorganic CsSnI₃/CsSnCl₃-Based Graded Perovskite Absorber Structure for High Performance Solar Cell

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2025-07-24 DOI:10.1109/JQE.2025.3592472

Smriti Baruah;Janmoni Borah;Santanu Maity

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引用次数: 0

Abstract

Future developments in perovskite solar cells (PSCs) focuses on lead-free versions because of their lower toxicity. However, lead-free PSCs’ limited Power Conversion Efficiency (PCE) compared to their lead-based counterparts prevents them from being used more widely. This issue can be successfully resolved with the multi-absorber approach since it maximizes the use of the solar spectrum. Therefore, this article incorporates numerical modeling guided optimization of a lead free all inorganic ITO/ETL/CsSnI3/CsSnCl3/HTL dual absorbers-based heterojunction structure to improve the performance of Cesium Tin Iodide (CsSnI3) and Cesium Tin Chloride (CsSnCl3) based single absorber PSCs. The critical device’s parameters, such as absorber layer and carrier transport layer thickness, defect density, temperature, doping concentration, series and shunt resistances are thoroughly optimized and evaluated using Solar cell capacitance simulator (SCAPS-1D). The proposed dual absorber composition produces a substantial enhancement in performance with PCE (

$\eta $

) of 24%, Short Circuit Current (

$J_{\mathrm {sc}}$

) of 28.5 mA/cm2, Open Circuit Voltage (

$V_{\mathrm {oc}}$

) of 0.96 V, and Field Factor (FF) of 85.87% at a device defect density of

$10^{15}$

cm−3 outperforming the 12.96% and 9.66% of PCE attained with the reported CsSnI3 and CsSnCl3 single junction counterparts.

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高性能太阳能电池用新型无铅全无机CsSnI₃/CsSnCl₃梯度钙钛矿吸收结构的器件工程

钙钛矿太阳能电池（PSCs）的未来发展重点是无铅版本，因为它们的毒性较低。然而，与基于铅的同类产品相比，无铅psc的有限功率转换效率（PCE）阻碍了它们的更广泛应用。这个问题可以通过多吸收器方法成功解决，因为它最大限度地利用了太阳光谱。因此，本文采用数值模拟指导优化无铅全无机ITO/ETL/ CsSnCl3/ CsSnCl3/ html双吸收剂异质结结构，以提高基于碘化锡铯（cssn3）和氯化锡铯（CsSnCl3）的单吸收剂psc的性能。利用太阳能电池电容模拟器（SCAPS-1D）对吸收层和载流子输运层厚度、缺陷密度、温度、掺杂浓度、串联电阻和分流电阻等关键器件参数进行了全面优化和评估。在器件缺陷密度为$10^{15}$ cm−3的情况下，所提出的双吸收器组合产生了显著的性能提升，PCE （$\eta $）为24%，短路电流（$J_{\mathrm {sc}}$）为28.5 mA/cm2，开路电压（$V_{\mathrm {oc}}$）为0.96 V，场因子（FF）为85.87%，优于已报道的CsSnCl3和CsSnCl3单结对应器件的PCE（12.96%和9.66%）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.