Quantum emitters based on 2D materials: Progress and prospects

Abstract

In modern quantum technologies, quantum emitters (QEs) have emerged as core components of quantum communication networks and on-chip quantum information processing, representing a pivotal link in future quantum systems. Due to atomic-scale thickness, the absence of dangling bonds at interfaces, and surface-localized photonic states that facilitate efficient light–matter interactions, two-dimensional (2D) materials are considered ideal platforms for high-performance, wavelength-tunable, and on-chip integrable solid-state QEs. While QEs have been demonstrated in various 2D materials, several challenges and unresolved issues remain. This review systematically summarizes the latest advances in the research of QEs based on 2D materials, aiming to provide comprehensive introductory guidance for beginners or interested readers. We first outline the fundamentals of single-photon emission, including basic principles, performance metrics, and experimental characterization methods. A comprehensive survey of cutting-edge studies on QEs based on hexagonal boron nitride, transition metal dichalcogenides, and twisted moiré heterostructures is presented, highlighting emission mechanisms and structure–luminescence correlations. Furthermore, we summarize strategies for creating and localizing QEs through external field engineering in 2D systems, tuning emission wavelengths, and enhancing emission performance, including wavelength tuning and emission enhancement techniques. Finally, current challenges are analyzed, and perspectives for advancing scientific exploration in this field are proposed. Leveraging their unique physical properties and integration potential, these 2D QEs hold great promise for quantum information technologies, communication systems, and various interdisciplinary fields.