Asymmetric Write Error Rate Caused by Self-Heating-Induced Offset Field Shift in Spin-Orbit-Torque Magnetic Tunnel Junctions

IF 1.1 4区物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Magnetics Letters Pub Date : 2026-01-12 DOI:10.1109/LMAG.2026.3652528

Kaiyuan Zhou;Wenlong Yang;Xuejie Xie;Hengan Zhou;Cheng Zhuo;Enlong Liu

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Abstract

In this letter, we study the asymmetric increase of write error rate (WER) as the write voltage is elevated in spin-orbit-torque (SOT) magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. Besides the decrease of the free layer’s (FL) coercive field rendering the FL more vulnerable to the influence of offset field from synthetic antiferromagnets (SAFs), we observe, that during the write process, the temperature rise caused by the self-heating effect also modifies the magnetic properties of SAF layers in MTJ stacks. Through the measurement and analysis of two device types with different SAF designs, the amplitude and direction of the offset field show different temperature dependence, which determines an opposite preferentially stable state for the FL, and hence the anomalously high WER. Macrospin simulations of WER incorporating self-heating effect and temperature-dependent magnetic properties in both FL and SAF reproduce well the experimental observations. These findings offer novel insights into the role of the offset field and its temperature dependence in optimizing WER performance in SOT-MTJ devices.

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自旋-轨道-转矩磁隧道结中自热诱导偏置场位移引起的非对称写错误率

在这篇论文中，我们研究了垂直磁各向异性的自旋-轨道-扭矩（SOT）磁隧道结（MTJs）中，随着写入电压的升高，写入错误率（WER）的不对称增加。除了自由层（FL）的矫顽力场降低，使其更容易受到合成反铁磁体（SAFs）偏置场的影响外，我们还观察到，在写入过程中，自热效应引起的温度升高也改变了MTJ堆叠中反铁磁体层的磁性能。通过对两种不同SAF设计的器件类型的测量和分析，偏置场的振幅和方向表现出不同的温度依赖性，这决定了FL的相反的优先稳定状态，从而导致异常高的WER。考虑自热效应和温度相关磁特性的超涡旋模拟可以很好地再现实验观察结果。这些发现为偏置场的作用及其温度依赖性在优化SOT-MTJ器件的WER性能方面提供了新的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Magnetics Letters PHYSICS, APPLIED-

CiteScore

2.40

自引率

0.00%

发文量

期刊介绍： IEEE Magnetics Letters is a peer-reviewed, archival journal covering the physics and engineering of magnetism, magnetic materials, applied magnetics, design and application of magnetic devices, bio-magnetics, magneto-electronics, and spin electronics. IEEE Magnetics Letters publishes short, scholarly articles of substantial current interest. IEEE Magnetics Letters is a hybrid Open Access (OA) journal. For a fee, authors have the option making their articles freely available to all, including non-subscribers. OA articles are identified as Open Access.