K. A. Chashtanov, A. E. Vinnik, A. N. Zarubin, P. V. Kosmachev, I. D. Chsherbakov, Y. S. Petrova, M. S. Skakunov, O. P. Tolbanov, A. V Tyazhev, L. K. Shaimerdenova, A. V. Shemeryankina, M. S. Trofimov, T. A. Mikhailov
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引用次数: 0
Abstract
This paper presents the results of calculations and experimental investigations of steady-state current-voltage characteristics and electric field distribution made for single-element (pad) and multi-element X‑ray sensors based on high-resistive chromium-compensated gallium arsenide (HR-GaAs:Cr). Experimental IV-curves of pad sensors have been used to verify and optimize the calculation model. The model was optimized by varying the concentration of thermal acceptors and potential barrier height. The main criterion of optimization was the best agreement between the calculated and measured IV characteristics of the pad sensors. Furthermore, we applied the optimized model to calculate the IV-curves and electric field strength profiles within pixel sensors. Reults of our calculations reveal that in the voltage range from 0.05 to 1 V, the dark current is governed by both the electron and hole components; however, at voltages above 10 V, the contribution of holes to the dark current prevails. It is demonstrated that the distribution of the electric field strength within the sensor volume remains unchanged when the temperature varies from +25 to +50 °C.
期刊介绍:
Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.