Steady-state current-voltage characteristics and electric field profiles in multi-element HR-GaAs:Cr X-ray sensors

IF 0.8 4区 物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY
K. A. Chashtanov, A. E. Vinnik, A. N. Zarubin, P. V. Kosmachev, I. D. Chsherbakov, Y. S. Petrova, M. S. Skakunov, O. P. Tolbanov, A. V Tyazhev, L. K. Shaimerdenova, A. V. Shemeryankina, M. S. Trofimov, T. A. Mikhailov
{"title":"Steady-state current-voltage characteristics and electric field profiles in multi-element HR-GaAs:Cr X-ray sensors","authors":"K. A. Chashtanov,&nbsp;A. E. Vinnik,&nbsp;A. N. Zarubin,&nbsp;P. V. Kosmachev,&nbsp;I. D. Chsherbakov,&nbsp;Y. S. Petrova,&nbsp;M. S. Skakunov,&nbsp;O. P. Tolbanov,&nbsp;A. V Tyazhev,&nbsp;L. K. Shaimerdenova,&nbsp;A. V. Shemeryankina,&nbsp;M. S. Trofimov,&nbsp;T. A. Mikhailov","doi":"10.1007/s11182-025-03643-5","DOIUrl":null,"url":null,"abstract":"<div><p>This paper presents the results of calculations and experimental investigations of steady-state current-voltage characteristics and electric field distribution made for single-element (pad) and multi-element X‑ray sensors based on high-resistive chromium-compensated gallium arsenide (HR-GaAs:Cr). Experimental IV-curves of pad sensors have been used to verify and optimize the calculation model. The model was optimized by varying the concentration of thermal acceptors and potential barrier height. The main criterion of optimization was the best agreement between the calculated and measured IV characteristics of the pad sensors. Furthermore, we applied the optimized model to calculate the IV-curves and electric field strength profiles within pixel sensors. Reults of our calculations reveal that in the voltage range from 0.05 to 1 V, the dark current is governed by both the electron and hole components; however, at voltages above 10 V, the contribution of holes to the dark current prevails. It is demonstrated that the distribution of the electric field strength within the sensor volume remains unchanged when the temperature varies from +25 to +50 °C.</p></div>","PeriodicalId":770,"journal":{"name":"Russian Physics Journal","volume":"68 11","pages":"1975 - 1983"},"PeriodicalIF":0.8000,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Physics Journal","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11182-025-03643-5","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

This paper presents the results of calculations and experimental investigations of steady-state current-voltage characteristics and electric field distribution made for single-element (pad) and multi-element X‑ray sensors based on high-resistive chromium-compensated gallium arsenide (HR-GaAs:Cr). Experimental IV-curves of pad sensors have been used to verify and optimize the calculation model. The model was optimized by varying the concentration of thermal acceptors and potential barrier height. The main criterion of optimization was the best agreement between the calculated and measured IV characteristics of the pad sensors. Furthermore, we applied the optimized model to calculate the IV-curves and electric field strength profiles within pixel sensors. Reults of our calculations reveal that in the voltage range from 0.05 to 1 V, the dark current is governed by both the electron and hole components; however, at voltages above 10 V, the contribution of holes to the dark current prevails. It is demonstrated that the distribution of the electric field strength within the sensor volume remains unchanged when the temperature varies from +25 to +50 °C.

多元素HR-GaAs:Cr x射线传感器的稳态电流-电压特性和电场分布
本文介绍了基于高阻铬补偿砷化镓(HR-GaAs:Cr)的单元件(pad)和多元件X射线传感器稳态电流电压特性和电场分布的计算和实验研究结果。利用垫式传感器的实验iv曲线对计算模型进行了验证和优化。通过改变热受体浓度和势垒高度对模型进行优化。优化的主要准则是垫式传感器的计算值和实测值之间的最佳一致性。此外,我们还应用优化模型计算了像素传感器内部的iv曲线和电场强度分布图。计算结果表明,在0.05 ~ 1 V的电压范围内,暗电流同时受电子和空穴分量的控制;然而,在电压高于10 V时,空穴对暗电流的贡献占主导地位。结果表明,当温度在+25 ~ +50 °C范围内变化时,传感器体积内的电场强度分布保持不变。
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来源期刊
Russian Physics Journal
Russian Physics Journal PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.00
自引率
50.00%
发文量
208
审稿时长
3-6 weeks
期刊介绍: Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.
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