Kelun Zhao , Jiaming Zhou , Qiang Kang , Yanqing Zhang , Yang Liu , Xinyi Li , Chaoming Liu , Tianqi Wang , Zhongyu Li , Mingxue Huo
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引用次数: 0
Abstract
This study focused on the damage disparity and coupling effects of 2 MeV protons and 1 MeV electrons in irradiated GaInP/GaAs HJT solar cells. It was found that the Voc, Jsc and EQE curve exhibited similar degradation levels at proton and electron fluences of 5 × 1011 cm−2 and 8 × 1014 cm−2, respectively. An equivalency factor of Rep = 1.55 was determined for the GaInP/GaAs HJT cell, resulting from the far greater displacement damage effectiveness of 2 MeV protons compared to 1 MeV electrons. DIV analysis showed that both Jdiff and Jrec increased linearly with fluence, with Jrec being the dominant component. Defect analysis revealed that 2 MeV protons uniquely introduced the H2 (Ev + 0.32 eV) defect. Despite these differences in specific defects, their overall impact on the SRH recombination lifetime was similar when compared at an equivalent displacement damage dose. Sequential irradiation experiments confirmed that the coupled damage did not introduce new defects but resulted in a linear superposition of the defects induced by individual irradiations, indicating no significant synergistic effect.
期刊介绍:
Solar Energy welcomes manuscripts presenting information not previously published in journals on any aspect of solar energy research, development, application, measurement or policy. The term "solar energy" in this context includes the indirect uses such as wind energy and biomass