P. Uthayakumar, K. Kathiresan, M. Ismail Fathima, S. K. Logesh
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引用次数: 0
Abstract
We study (Ag:HfO₂), designed to act simultaneously as an antireflective coating (ARC) and an intermediate reflective layer (IRL) in planar amorphous silicon (a-Si) solar cells. The optical behavior is analyzed using Scilab-based simulations with the Transfer Matrix Method (TMM), enabling precise modeling of light propagation and interference within multilayer structures. Silver incorporation modifies the HfO₂ permittivity via free-carrier effects described by the Drude model, producing epsilon-near-zero (ENZ) conditions and regions with negative permittivity. These properties enhance light trapping and absorption by minimizing front surface reflection and boosting internal reflection at the rear interface. The proposed planar approach improves optical absorption and internal quantum efficiency (IQE) without requiring complex nanostructures, offering a scalable, fabrication-compatible strategy for high-efficiency thin-film solar cells.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.