Impact of switching interaction on FWD chip size selection for an asynchronous boost converter

Power electronic devices and components Pub Date : 2026-03-01 Epub Date: 2025-12-15 DOI:10.1016/j.pedc.2025.100135
Hyunyong Park, Yeonjun Kim, Hyemin Kang
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Abstract

This paper investigates how switching interaction between power semiconductor devices affects the selection of free-wheeling diode chip size in asynchronous boost converters. Coupled switching losses were measured through double pulse tests, and conduction losses were characterized independently. The results reveal that increasing the FWD chip size reduces its conduction loss, but can significantly increase the overall switching losses due to interaction with the power switch, especially when the switch is small. Furthermore, FWD chip size selection for the efficiency depends strongly on system operating conditions such as switching frequency, duty ratio, input voltage, and temperature. The analysis shows that a simplified loss calculation ignoring device interaction can result in significant errors in FWD selection, particularly at high switching frequencies, voltages, or temperatures, which are increasingly relevant with the adoption of SiC technology. These results demonstrate that switching losses must be measured with the actual device pair to ensure energy-efficient converter design.

Abstract Image

开关相互作用对异步升压变换器FWD芯片尺寸选择的影响
本文研究了功率半导体器件之间的开关相互作用对异步升压变换器中自由旋转二极管芯片尺寸选择的影响。耦合开关损耗通过双脉冲试验测量,导通损耗独立表征。结果表明,增大FWD芯片尺寸可以降低其导通损耗,但由于与功率开关的相互作用,会显著增加整体开关损耗,特别是当开关较小时。此外,对于效率的FWD芯片尺寸选择在很大程度上取决于系统的工作条件,如开关频率、占空比、输入电压和温度。分析表明,忽略器件相互作用的简化损耗计算可能导致FWD选择的重大错误,特别是在高开关频率、电压或温度下,这与SiC技术的采用越来越相关。这些结果表明,必须用实际器件对测量开关损耗,以确保高效节能的变换器设计。
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来源期刊
Power electronic devices and components
Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality
CiteScore
2.00
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0.00%
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