Over two-fold purification efficiency improvement via magnetically controlled directional crystallization of Ga

IF 2.5 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2026-02-01 Epub Date: 2025-11-29 DOI:10.1016/j.jcrysgro.2025.128449

Zhe Shen, Dewei Xun, Meng Sun, Biao Ding, Zhongze Lin, Tianxiang Zheng, Bangfei Zhou, Yunbo Zhong

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Abstract

The high-purity preparation of gallium (Ga) faces bottlenecks such as low purification efficiency and lengthy processing steps. This study innovatively proposes the introduction of magnetically controlled flow during the directional crystallization purification of Ga. This magnetically controlled technique more than doubles the purification efficiency, achieving a purity of 11.629 ppm in only two passes compared to the 11.843 ppm obtained by the conventional method in six passes. The underlying mechanism for this enhancement lies in the fact that the magnetically controlled flow promotes the migration of impurities at the solidification front, reduces the thickness of the solute boundary layer, and lowers the effective distribution coefficient, thereby significantly increasing purification efficiency. This magnetically controlled purification technique offers a new approach for efficient production of high-purity and even ultra-high-purity Ga, and can be further extended to the purification of other metals.

Kewwords: High-purity gallium; Directional crystallization; Magnetically controlled flow; Effective distribution coefficient; Solute boundary layer.

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磁控定向结晶使镓的提纯效率提高了两倍以上

高纯度镓的制备面临提纯效率低、工艺步骤长等瓶颈。本研究创新性地提出在定向结晶提纯过程中引入磁控流。这种磁控技术的净化效率提高了一倍以上，仅两道就能获得11.629 ppm的纯度，而传统方法需要六道才能获得11.843 ppm的纯度。这种增强的潜在机制是磁控流动促进了杂质在凝固前沿的迁移，减小了溶质边界层的厚度，降低了有效分配系数，从而显著提高了净化效率。这种磁控净化技术为高效生产高纯甚至超高纯Ga提供了新的途径，并可进一步推广到其他金属的提纯。关键词：高纯镓；定向结晶;磁控流量；有效分配系数；溶质边界层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.