Growth and structure of La-doped Sr3Fe2O7 thin films on SrTiO3(001) by pulsed laser deposition

IF 2.5 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2026-01-01 Epub Date: 2025-11-01 DOI:10.1016/j.jcrysgro.2025.128396

Jiaxin Li , Xunqing Yin , Mengjia Wang , Saiqun Ma , Bo Zhang , Sheng Huang , Feng Liu , Pengfei Jiao , Guohua Wang , Dong Qian

{"title":"Growth and structure of La-doped Sr3Fe2O7 thin films on SrTiO3(001) by pulsed laser deposition","authors":"Jiaxin Li , Xunqing Yin , Mengjia Wang , Saiqun Ma , Bo Zhang , Sheng Huang , Feng Liu , Pengfei Jiao , Guohua Wang , Dong Qian","doi":"10.1016/j.jcrysgro.2025.128396","DOIUrl":null,"url":null,"abstract":"<div><div>Growth of Ruddlesden-Popper phase LaxSryFe2O7-δ single crystalline thin films on SrTiO3(001) was carried out using pulsed laser deposition (PLD) and investigated by in situ reflection high-energy electron diffraction (RHEED), ex situ X-ray diffraction (XRD) and transmission electron microscope (TEM). The results show that the films can grow epitaxially in a two-dimensional mode at 850℃, with a surface roughness of ∼ 0.1 nm for 30-nm thick films. The film composition was determined to be La0.83Sr1.95Fe2O7-δ by energy dispersive x-ray spectroscopy (EDS) mapping. Electrical transport measurements revealed that the La0.83Sr1.95Fe2O7-δ/STO(001) film has an activation energy of ∼ 0.16 eV. Additionally, freestanding 40-nm La0.83Sr1.95Fe2O7-δ/1.2-nm STO films were obtained using Sr3Al2O6 as a sacrificial layer. PACS: 68.37.-d, 68.55.-a, 81.15.Fg.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"673 ","pages":"Article 128396"},"PeriodicalIF":2.5000,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024825003501","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/11/1 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}

引用次数: 0

Abstract

Growth of Ruddlesden-Popper phase La_xSr_yFe₂O₇_-_δ single crystalline thin films on SrTiO₃(001) was carried out using pulsed laser deposition (PLD) and investigated by in situ reflection high-energy electron diffraction (RHEED), ex situ X-ray diffraction (XRD) and transmission electron microscope (TEM). The results show that the films can grow epitaxially in a two-dimensional mode at 850℃, with a surface roughness of ∼ 0.1 nm for 30-nm thick films. The film composition was determined to be La_0.83Sr_1.95Fe₂O₇_-_δ by energy dispersive x-ray spectroscopy (EDS) mapping. Electrical transport measurements revealed that the La_0.83Sr_1.95Fe₂O₇_-_δ/STO(001) film has an activation energy of ∼ 0.16 eV. Additionally, freestanding 40-nm La_0.83Sr_1.95Fe₂O₇_-_δ/1.2-nm STO films were obtained using Sr₃Al₂O₆ as a sacrificial layer. PACS: 68.37.-d, 68.55.-a, 81.15.Fg.

查看原文本刊更多论文

脉冲激光沉积SrTiO3（001）上la掺杂Sr3Fe2O7薄膜的生长与结构

采用脉冲激光沉积（PLD）技术在SrTiO3（001）上生长Ruddlesden-Popper相LaxSryFe2O7-δ单晶薄膜，并采用原位反射高能电子衍射（RHEED）、非原位x射线衍射（XRD）和透射电子显微镜（TEM）对其进行了研究。结果表明，在850℃下，薄膜可以在二维模式下外延生长，对于30 nm厚的薄膜，表面粗糙度为~ 0.1 nm。通过能谱分析（EDS）确定薄膜成分为La0.83Sr1.95Fe2O7-δ。电输运测量表明，La0.83Sr1.95Fe2O7-δ/STO（001）薄膜具有约0.16 eV的活化能。此外，以Sr3Al2O6为牺牲层，制备了40 nm La0.83Sr1.95Fe2O7-δ/1.2 nm STO薄膜。pac: 68.37。68.55 - d,。——81.15.Fg。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.