{"title":"Enhanced IR transmittance of CZT substrates: Surface processing and Cd-saturated annealing","authors":"Shangshu Li , Xiaolu Xiong , Chao Xu , Changhe Zhou","doi":"10.1016/j.jcrysgro.2025.128395","DOIUrl":null,"url":null,"abstract":"<div><div>The IR transmission behavior of Cd<sub>1-</sub><em><sub>x</sub></em>Zn<em><sub>x</sub></em>Te (CZT) slices can provide useful information about inclusion/precipitate feature, stoichiometry and free carriers. High infrared (IR) transmittance is essential for the application of CZT in infrared focal plane arrays (IRFPA). The IR transmittance features of the CZT slices with different surface states are analyzed, and the indicator T<sub>625</sub> is used to assess whether the slices should be annealed or not. The preprocessed CZT slices with rough surfaces and T<sub>625</sub> < 45 % are annealed under Cd-saturated atmosphere, and results demonstrate that IR transmittance improvement is insignificant either by increasing annealing time or temperature. Furthermore, the (111) Cd and (111) Te surfaces are respectively ground (to obtain smooth surfaces) and annealed. The result shows the IR transmittance improvement of slices ground on (111) Cd surface is more obvious compared with slices ground on (111) Te surface. Density functional theory (DFT) calculations were also employed to investigate the reaction mechanism between molecular oxygen and CdTe, and the theoretical calculation results indicate that (111) Te surface is more easily oxidized than (111) Cd surface. The experimental and theoretical results demonstrate the presence of oxidation layer can account for the ineffective IR transmittance improvement. Additionally, a cost-effective CZT substrate processing is proposed in this study.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"673 ","pages":"Article 128395"},"PeriodicalIF":2.5000,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024825003495","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/11/1 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
The IR transmission behavior of Cd1-xZnxTe (CZT) slices can provide useful information about inclusion/precipitate feature, stoichiometry and free carriers. High infrared (IR) transmittance is essential for the application of CZT in infrared focal plane arrays (IRFPA). The IR transmittance features of the CZT slices with different surface states are analyzed, and the indicator T625 is used to assess whether the slices should be annealed or not. The preprocessed CZT slices with rough surfaces and T625 < 45 % are annealed under Cd-saturated atmosphere, and results demonstrate that IR transmittance improvement is insignificant either by increasing annealing time or temperature. Furthermore, the (111) Cd and (111) Te surfaces are respectively ground (to obtain smooth surfaces) and annealed. The result shows the IR transmittance improvement of slices ground on (111) Cd surface is more obvious compared with slices ground on (111) Te surface. Density functional theory (DFT) calculations were also employed to investigate the reaction mechanism between molecular oxygen and CdTe, and the theoretical calculation results indicate that (111) Te surface is more easily oxidized than (111) Cd surface. The experimental and theoretical results demonstrate the presence of oxidation layer can account for the ineffective IR transmittance improvement. Additionally, a cost-effective CZT substrate processing is proposed in this study.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.