{"title":"Bi-Modal Synapse Based on a Short-Channel Ferroelectric van der Waals Heterostructure.","authors":"Ankita Ram,Stephane Fusil,Shehr Bano Masood,Neeraj Kumar Rajak,Gaurab Samanta,Mohamed Soliman,Takashi Taniguchi,Kenji Watanabe,Bernard Doudin,Abdelkarim Ouerghi,Alexei Gruverman,Jean-Francois Dayen","doi":"10.1021/acsami.5c16593","DOIUrl":null,"url":null,"abstract":"The growing demand for energy-efficient and -adaptive computing drives research into neuromorphic architectures. Van der Waals (vdW) ferroelectric field-effect transistors offer nonvolatile polarization control and a highly tunable semiconductor channel, enabling multilevel states and making them promising for brain-inspired electronics. Here, we present a reconfigurable bimodal ferroelectric synapse based on the CuInP2S6/hBN/WSe2 vdW heterostructure, extending beyond conventional single-modal synaptic devices by introducing added functionality. Transport measurements and piezoresponse force microscopy reveal precise electrical control over the ferroelectric domain landscape, enabling continuous tuning of WSe2 channel conductance and its threshold voltage. Crucially, the ambipolar nature of WSe2 allows for real-time switching between excitatory and inhibitory synaptic behaviors, mimicking multimodal neurotransmission observed in the human brain. Moreover, the bimodal synapse is demonstrated at channel lengths down to 50 nm, venturing into previously uncharted territory for ferroelectric vdW synapses. Neural network simulations incorporating our device show excellent learning performance for both synaptic modes, highlighting its potential for next-generation neuromorphic computing. This work expands the functional and scaling capabilities of vdW ferroelectric technology, highlighting its potential for next-generation artificial intelligence electronics.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"105 1","pages":""},"PeriodicalIF":8.2000,"publicationDate":"2025-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.5c16593","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The growing demand for energy-efficient and -adaptive computing drives research into neuromorphic architectures. Van der Waals (vdW) ferroelectric field-effect transistors offer nonvolatile polarization control and a highly tunable semiconductor channel, enabling multilevel states and making them promising for brain-inspired electronics. Here, we present a reconfigurable bimodal ferroelectric synapse based on the CuInP2S6/hBN/WSe2 vdW heterostructure, extending beyond conventional single-modal synaptic devices by introducing added functionality. Transport measurements and piezoresponse force microscopy reveal precise electrical control over the ferroelectric domain landscape, enabling continuous tuning of WSe2 channel conductance and its threshold voltage. Crucially, the ambipolar nature of WSe2 allows for real-time switching between excitatory and inhibitory synaptic behaviors, mimicking multimodal neurotransmission observed in the human brain. Moreover, the bimodal synapse is demonstrated at channel lengths down to 50 nm, venturing into previously uncharted territory for ferroelectric vdW synapses. Neural network simulations incorporating our device show excellent learning performance for both synaptic modes, highlighting its potential for next-generation neuromorphic computing. This work expands the functional and scaling capabilities of vdW ferroelectric technology, highlighting its potential for next-generation artificial intelligence electronics.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.