Comprehensive Optical Band-Edge Characterization for Multilayered MoTe2 and Its Application in van der Waals-Stacked Heterojunction Devices (Small 42/2025)

IF 12.1 2区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Small Pub Date : 2025-10-23 DOI:10.1002/smll.70720

Yin-Chou Huang, Dai-Yan Yang, Luthviyah Choirotul Muhimmah, Yu-Hung Peng, Yen-Chang Su, Ching-Hwa Ho

引用次数: 0

Abstract

Heterojunction Devices

In article number 2503542, Ching-Hwa Ho and co-workers highlight opto-excitonic properties of 2H-MoTe₂ and its applications in heterojunction devices. This work incorporates multiple visual elements to illustrate key research insights. The laboratory background emphasizes experimental basis, while the foreground depicts the stacking of layered 2D materials on a Si/SiO₂ substrate, forming a p-n heterojunction between p-type SnS and n-type MoTe₂.

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多层MoTe2的综合光学带边特性及其在范德华堆叠异质结器件中的应用（Small 42/2025）

异质结器件在文章编号2503542中，Ho Ching-Hwa及其同事重点介绍了2H-MoTe2的光激子性质及其在异质结器件中的应用。这项工作结合了多种视觉元素来说明关键的研究见解。实验室背景强调实验基础，前景描绘了层状二维材料在Si/SiO2衬底上的堆叠，在p型SnS和n型MoTe2之间形成p-n异质结。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Small 工程技术-材料科学：综合

CiteScore

17.70

自引率

3.80%

发文量

1830

审稿时长

2.1 months

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