Enhanced room-temperature thermoelectric power factor of β-Zn4Sb3 thin films via surface roughness optimization

IF 4.1 3区 材料科学 Q2 CHEMISTRY, PHYSICAL
Avinash Kumar and S.K. Tripathi
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Abstract

Roughness-induced resistivity and surface scattering components play a vital role in the optimization of charge carrier transport properties in thin film surfaces. In the present work, the effects of surface roughness on thermoelectric (TE) parameters, namely, the Seebeck coefficient (S), electrical conductivity (σ) and power factor (PF) are investigated. The melt quenching method was employed for the synthesis of β-Zn4Sb3. Thin films of various thicknesses ranging from 69 nm to 363 nm were deposited using a thermal evaporation process, which resulted in variation of the surface roughness from 6.94 nm to 37.51 nm. The maximum S and PF values of 227 μV K−1 and 814 μW m−1 K−2 at room temperature (RT) were obtained for the thin film with a roughness of 28.94 nm, which represented 3.05- and 41.84-fold enhancements, respectively, over the corresponding values for the film with a roughness of 6.94 nm. The enhancement of the S values with increasing roughness was attributed to the introduction of surface energy filtering effects. The maximum σ value of 2.25 × 104 S m−1 was obtained for the film with a roughness value of 21.75 nm. The initial increasing trend in the σ values with increasing roughness was attributed to the longer mean free path for the carriers caused by the increased crystallite sizes, and the subsequent decreasing trend was attributed to the increased resistivity, surface scattering and trapping of carriers caused by the dominance of roughness effects. X-ray diffraction (XRD) and Raman spectroscopy were employed to investigate the structural characteristics of the surfaces which revealed enhancement of the crystallite sizes with increasing film thickness. The film thicknesses of the prepared surfaces were determined by cross-sectional field emission scanning electron microscopy (FESEM) and found to be 69 nm, 146 nm, 239 nm, 286 nm and 363 nm. Atomic force microscopy (AFM) was employed to investigate the topographical characteristics and height irregularities of the surfaces. 3D micrographs of the surfaces were constructed, and parameters including roughness, skewness and kurtosis were determined. The surface roughness was consistently enhanced with increasing thickness, which was attributed to the vertical accumulation and growth of larger crystallites. Ultraviolet visible spectroscopy (UV-vis) was employed to investigate the optical properties and estimate the bandgaps. The reduction in the bandgaps was attributed to the reduced confinement effects and enhanced light absorption tendency of rougher surfaces.

Abstract Image

通过表面粗糙度优化提高β-Zn4Sb3薄膜的室温热电功率因数
粗糙度电阻率和表面散射分量在优化薄膜表面载流子输运特性中起着至关重要的作用。在本工作中,研究了表面粗糙度对热电(TE)参数,即塞贝克系数(S)、电导率(σ)和功率因数(PF)的影响。采用熔体淬火法制备了β-Zn4Sb3。采用热蒸发法制备了69 ~ 363 nm厚度的薄膜,表面粗糙度从6.94 nm变化到37.51 nm。在室温下,粗糙度为28.94 nm的薄膜的S和PF值分别为227 μV K−1和814 μW m−1 K−2,比粗糙度为6.94 nm的薄膜分别提高了3.05倍和41.84倍。S值随着粗糙度的增加而增强,这是由于引入了表面能滤波效应。薄膜的粗糙度值为21.75 nm,其最大σ值为2.25 × 104 S m−1。初始σ值随粗糙度的增加呈上升趋势,主要是由于晶粒尺寸的增大导致载流子的平均自由程变长,随后σ值呈下降趋势,主要是由于粗糙度效应导致载流子的电阻率、表面散射和俘获增加。利用x射线衍射(XRD)和拉曼光谱(Raman)研究了薄膜表面的结构特征,发现随着薄膜厚度的增加,晶体尺寸增大。采用横断面场发射扫描电镜(FESEM)测定了制备表面的膜厚,分别为69 nm、146 nm、239 nm、286 nm和363 nm。利用原子力显微镜(AFM)研究了表面的地形特征和高度不规则性。构建了表面的三维显微图像,并确定了粗糙度、偏度和峰度等参数。随着厚度的增加,表面粗糙度不断增强,这是由于较大的晶体在垂直方向上的积累和生长。紫外可见光谱(UV-vis)用于研究其光学性质和估计带隙。带隙的减小是由于约束效应的减小和粗糙表面的光吸收倾向的增强。
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来源期刊
Sustainable Energy & Fuels
Sustainable Energy & Fuels Energy-Energy Engineering and Power Technology
CiteScore
10.00
自引率
3.60%
发文量
394
期刊介绍: Sustainable Energy & Fuels will publish research that contributes to the development of sustainable energy technologies with a particular emphasis on new and next-generation technologies.
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