High-Performance Polarization-Sensitive Photodetector Based on ReS2/MoWSe2 van der Waals Heterostructure.

Abstract

Anisotropic two-dimensional (2D) materials offer a compelling platform for polarized light detection owing to their intrinsic polarization-sensitive optoelectronic responses. However, devices based on single materials often suffer from limited responsivity, narrow spectral coverage, and elevated noise levels. Here we report a high-performance, polarization-sensitive photodetector based on a van der Waals heterostructure composed of anisotropic ReS2 and a ternary MoWSe2 alloy. This design couples the polarization-dependent optical response of ReS2 with the low-defect and highly efficient absorption of MoWSe2, achieving a markedly high detectivity of 3.78 × 1014 Jones and a noticeable polarization ratio of 11.3 under zero or small negative bias. The built-in electric field of the junction effectively suppresses dark current and separates photogenerated carriers rapidly, making the device capable of broadband detection from the visible (405 nm) to near-infrared (1064 nm) spectrum. Under forward bias, the device transitions to a photoconductive regime, achieving a responsivity of 23.22 A/W. These findings highlight the potential of ReS2/MoWSe2 heterostructures as a versatile and scalable platform for broadband, low-noise, and polarization-resolved photodetection, offering a scalable route toward advanced optoelectronic technologies.