Thermochromic 2D (n-BA)2NiIxCl4-x perovskite interlayer-integrated self-powered and reverse-biased Si-photodiode

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-10-16 DOI:10.1016/j.sna.2025.117175

Ali Baltakesmez , Sebahaddin Alptekin

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引用次数: 0

Abstract

The thermochromic 2D perovskite materials have gained interest due to their potential applications in smart windows, sensors, optical switches, and temperature indicators. In this study, we have focused on the thermochromic interlayer effect on the electrical performance of the (photo)diode. A novel 2D (n-BA)₂NiI_xCl₄_-x perovskite thin film was characterized in terms of its morphological, structural, and optical properties. Additionally, an Au/(n-BA)₂NiI_xCl₄_-x/n-Si/Al device was fabricated to determine the effect of the thermochromic perovskite interlayer. The surface-SEM images showed the presence of microcrystal perovskite plates. The diffraction pattern exhibited an intense peak at 2θ = 9.81°, which corresponds to an interplanar d-spacing of 9.1 Å, supporting the presence of the 2D structure. Furthermore, the theoretical stoichiometric ratio has deviated due to the reversible 0D and 2D perovskite formation by the thermochromic effect. The band gap of the film on the glass substrate changed from 3.14 eV to 2.43 eV. The Au/(n-BA)₂NiI_xCl₄_-x/n-Si/Al device showed a thermally switching feature with increasing threshold voltage in the forward bias, and the leakage current significantly increased in the reverse bias. Additionally, the device has photodetection features which can be switched between the photodiode and photoconductor, and thus it presents the responsivity of both modes in one device (self-powered (0 V), reversed-biased (-0.9 V)). The significant rectifying and photoresponse performances have been achieved by Au/(n-BA)₂NiI_xCl₄_-x/n-Si/Al device, such as R_max: 1.17 A/W, D_max: 4.6 × 10¹⁰ Jones, NEP_min: 2.99 × 10⁻¹² W/Hz^1/2, and EQE_max: 262 % in the photodiode mode, and R_max: 46 mA/W, D_max: 1.7 × 10¹⁰ Jones, NEP_min: 7.07 × 10⁻¹² W/Hz^1/2, and EQE_max: 10.5 % in the photoconductor mode. Therefore, as a novel concept, the thermochromic perovskite-integrated diode has shown potential for new applications in the (opto)electronic field. Therefore, the findings may provide a source of ideas for new research.

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热致变色2D (n-BA)2NiIxCl4-x钙钛矿层间集成自供电反偏硅光电二极管

热致变色二维钙钛矿材料由于其在智能窗口、传感器、光学开关和温度指示器方面的潜在应用而引起了人们的兴趣。在本研究中，我们重点研究了热致变色层间效应对光电二极管电性能的影响。研究了一种新型2D (n-BA)2NiIxCl4-x钙钛矿薄膜的形态、结构和光学性质。此外，制作了Au/(n-BA)2NiIxCl4-x/n-Si/Al器件，以测定热致变色钙钛矿中间层的影响。表面扫描电镜图像显示微晶钙钛矿板的存在。衍射图在2θ = 9.81°处有一个强烈的峰，对应的面间距为9.1 Å，支持了二维结构的存在。此外，由于热致变色效应的可逆0D和2D钙钛矿的形成，理论化学计量比已经偏离。薄膜在玻璃基板上的带隙由3.14 eV变为2.43 eV。Au/(n-BA)2NiIxCl4-x/n-Si/Al器件表现出正向偏置阈值电压增大的热开关特性，反向偏置漏电流显著增大。此外，该器件具有光电检测功能，可以在光电二极管和光电导体之间切换，因此它在一个器件中呈现两种模式的响应性（自供电（0 V），反偏（-0.9 V））。重大整流和光敏反应表演已经通过非盟/ (n-BA) 2 niixcl4-x / n-Si / Al设备,如征求:1.17 A / W,距离:4.6 ×1010 琼斯NEPmin: 2.99 × 10−12 W / Hz1/2 EQEmax: 262 %光电二极管模式,并征求:46 mA / W,距离:1.7 ×1010 琼斯NEPmin: 7.07 × 10−12 W / Hz1/2 EQEmax: 10.5 %在光电导体模式。因此，作为一种新概念，热致变色钙钛矿集成二极管在光电领域显示出新的应用潜力。因此，这些发现可能为新的研究提供思想来源。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...