Properties of doped sapphire crystals and their optoelectronic applications

IF 1.9 2区材料科学 Q1 CRYSTALLOGRAPHY

Progress in Crystal Growth and Characterization of Materials Pub Date : 2025-10-13 DOI:10.1016/j.pcrysgrow.2025.100688

Yan Huang , Xuefeng Xiao , Xu Han , Jiahao Li , Yan Zhang , Jiashun Si , Shuaijie Liang , Qingyan Xu , Huan Zhang , Lingling Ma , Cui Yang , Xuefeng Zhang

{"title":"Properties of doped sapphire crystals and their optoelectronic applications","authors":"Yan Huang , Xuefeng Xiao , Xu Han , Jiahao Li , Yan Zhang , Jiashun Si , Shuaijie Liang , Qingyan Xu , Huan Zhang , Lingling Ma , Cui Yang , Xuefeng Zhang","doi":"10.1016/j.pcrysgrow.2025.100688","DOIUrl":null,"url":null,"abstract":"<div><div>Doped sapphire crystals (e.g., Ti: Al₂O₃, Cr: Al₂O₃, C: Al₂O₃, etc.), with their excellent physicochemical properties and tunable optoelectronic properties, are of great value for applications in the fields of laser devices, radiation detectors, and pyroelectric devices. In this paper, we systematically review the defect structures, preparation methods, and the modulation of the properties of different doped sapphire crystals, focus on the modulation mechanisms of different doping elements on the optical, mechanical, and laser properties of sapphire, and also details their optoelectronic applications in devices such as lasers, radiation detectors, and pyroelectric components. In addition, based on the current research progress, this paper also looks forward to the future development direction of doped sapphire crystals, including the optimization of the preparation technology for large-size and high-concentration uniformly doped crystals, as well as the potential for applications in emerging fields such as photonic chips and high-energy physics detectors, in anticipation of growing higher-quality doped sapphire crystals through the comprehensive improvement of the preparation technology and other aspects of the laser devices (e.g. photonic computing, LIDAR and other key hardware for artificial intelligence) and other applications.</div></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"71 4","pages":"Article 100688"},"PeriodicalIF":1.9000,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization of Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0960897425000300","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}

引用次数: 0

Abstract

Doped sapphire crystals (e.g., Ti: Al₂O₃, Cr: Al₂O₃, C: Al₂O₃, etc.), with their excellent physicochemical properties and tunable optoelectronic properties, are of great value for applications in the fields of laser devices, radiation detectors, and pyroelectric devices. In this paper, we systematically review the defect structures, preparation methods, and the modulation of the properties of different doped sapphire crystals, focus on the modulation mechanisms of different doping elements on the optical, mechanical, and laser properties of sapphire, and also details their optoelectronic applications in devices such as lasers, radiation detectors, and pyroelectric components. In addition, based on the current research progress, this paper also looks forward to the future development direction of doped sapphire crystals, including the optimization of the preparation technology for large-size and high-concentration uniformly doped crystals, as well as the potential for applications in emerging fields such as photonic chips and high-energy physics detectors, in anticipation of growing higher-quality doped sapphire crystals through the comprehensive improvement of the preparation technology and other aspects of the laser devices (e.g. photonic computing, LIDAR and other key hardware for artificial intelligence) and other applications.

查看原文本刊更多论文

掺杂蓝宝石晶体的性质及其光电应用

掺杂蓝宝石晶体（如Ti: Al₂O₃，Cr: Al₂O₃，C: Al₂O₃等）具有优异的物理化学性质和可调的光电性质，在激光器件、辐射探测器、热释电器件等领域具有很大的应用价值。本文系统地综述了不同掺杂蓝宝石晶体的缺陷结构、制备方法和性能调制，重点讨论了不同掺杂元素对蓝宝石光学、机械和激光性能的调制机制，并详细介绍了它们在激光器、辐射探测器和热释电元件等器件中的光电应用。此外，基于目前的研究进展，本文还展望了未来掺杂蓝宝石晶体的发展方向，包括大尺寸、高浓度均匀掺杂晶体制备技术的优化，以及在光子芯片、高能物理探测器等新兴领域的应用潜力。期望通过对激光器件（如光子计算、激光雷达等人工智能关键硬件）和其他应用的制备技术和其他方面的全面改进，生长出更高质量的掺杂蓝宝石晶体。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Progress in Crystal Growth and Characterization of Materials 工程技术-材料科学：表征与测试

CiteScore

8.80

自引率

2.00%

发文量

审稿时长

1 day

期刊介绍： Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research. Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.