A doherty power amplifier design approach for matched transistor without simulation model

IF 5.9 2区工程技术 Q1 ENGINEERING, MULTIDISCIPLINARY

Ain Shams Engineering Journal Pub Date : 2025-10-15 DOI:10.1016/j.asej.2025.103796

Haotian Li , Zhijiang Dai , Zhenyu Li , Shuai Wang

{"title":"A doherty power amplifier design approach for matched transistor without simulation model","authors":"Haotian Li , Zhijiang Dai , Zhenyu Li , Shuai Wang","doi":"10.1016/j.asej.2025.103796","DOIUrl":null,"url":null,"abstract":"<div><div>This article proposes for the first time a method for designing Doherty power amplifier(DPA) based on matched transistors without simulation model. In the design process of DPA, it is necessary to determine the transmission phase of the output matching network of the transistor. To this end, we first propose a method for extracting the transmission phase of the output matching network of the transistor from the perspective of circuit theory. In addition, to design DPA more accurately, we analyze the influence of the optimal impedance at the saturation state and the transmission phase of the main and peak matching networks on the backoff impedance. Finally, based on an internally matched transistor HEG028C, a DPA operating in the C-band was designed. The measured results showed that the operating frequency of the DPA was 4.2–4.8 GHz, the output power was between 44.4 dBm-46 dBm, the saturation efficiency was between 53.2 % −60.5 %, and the 6 dB backoff efficiency was 40 % −46.5 %. The experimental results demonstrate the effectiveness of the proposed design method.</div></div>","PeriodicalId":48648,"journal":{"name":"Ain Shams Engineering Journal","volume":"16 12","pages":"Article 103796"},"PeriodicalIF":5.9000,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ain Shams Engineering Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2090447925005374","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

This article proposes for the first time a method for designing Doherty power amplifier(DPA) based on matched transistors without simulation model. In the design process of DPA, it is necessary to determine the transmission phase of the output matching network of the transistor. To this end, we first propose a method for extracting the transmission phase of the output matching network of the transistor from the perspective of circuit theory. In addition, to design DPA more accurately, we analyze the influence of the optimal impedance at the saturation state and the transmission phase of the main and peak matching networks on the backoff impedance. Finally, based on an internally matched transistor HEG028C, a DPA operating in the C-band was designed. The measured results showed that the operating frequency of the DPA was 4.2–4.8 GHz, the output power was between 44.4 dBm-46 dBm, the saturation efficiency was between 53.2 % −60.5 %, and the 6 dB backoff efficiency was 40 % −46.5 %. The experimental results demonstrate the effectiveness of the proposed design method.

查看原文本刊更多论文

一种不需要仿真模型的匹配晶体管多赫蒂功率放大器设计方法

本文首次提出了一种不需要仿真模型的基于匹配晶体管的Doherty功率放大器（DPA）设计方法。在DPA的设计过程中，需要确定晶体管输出匹配网络的传输相位。为此，我们首先从电路理论的角度提出了一种提取晶体管输出匹配网络传输相位的方法。此外，为了更准确地设计DPA，我们分析了饱和状态下的最优阻抗以及主峰匹配网络的传输相位对退退阻抗的影响。最后，基于内部匹配晶体管HEG028C，设计了工作在c波段的DPA。测量结果表明，该DPA工作频率为4.2 ~ 4.8 GHz，输出功率为44.4 dBm ~ 46 dBm，饱和效率为53.2% ~ 60.5%，6db后退效率为40% ~ 46.5%。实验结果证明了该设计方法的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Ain Shams Engineering Journal Engineering-General Engineering

CiteScore

10.80

自引率

13.30%

发文量

441

审稿时长

49 weeks

期刊介绍： in Shams Engineering Journal is an international journal devoted to publication of peer reviewed original high-quality research papers and review papers in both traditional topics and those of emerging science and technology. Areas of both theoretical and fundamental interest as well as those concerning industrial applications, emerging instrumental techniques and those which have some practical application to an aspect of human endeavor, such as the preservation of the environment, health, waste disposal are welcome. The overall focus is on original and rigorous scientific research results which have generic significance. Ain Shams Engineering Journal focuses upon aspects of mechanical engineering, electrical engineering, civil engineering, chemical engineering, petroleum engineering, environmental engineering, architectural and urban planning engineering. Papers in which knowledge from other disciplines is integrated with engineering are especially welcome like nanotechnology, material sciences, and computational methods as well as applied basic sciences: engineering mathematics, physics and chemistry.