A Cryo-CMOS Triple Tail Comparator With Capacitive Over-Neutralization to Suppress Freeze-Out Induced Hysteresis

IF 4.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2025-08-07 DOI:10.1109/TCSII.2025.3596708

Bram Veraverbeke;Filip Tavernier

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引用次数: 0

Abstract

Dopant freeze-out severely increases the bulk resistance of cryogenic bulk CMOS transistors by up to

$10{^{{6}}} {\times }$

at 4.2K compared to room temperature. This brief describes, for the first time in the literature, how this increased bulk resistance introduces a memory effect in the latch of dynamic comparators, which leads to hysteresis. To measure this hysteresis reliably in the presence of noise, a statistical characterization procedure is developed. For a 40nm bulk CMOS strongARM comparator with an input-referred noise voltage of 348

$\mu $

VRMS, a hysteresis voltage >898

$\mu $

V is measured at 6K, substantially deteriorating the precision. Therefore, this brief introduces a triple tail comparator with capacitive over-neutralization to increase the preamplification gain, suppressing the hysteresis >

$6{\times }$

to only 141

$\mu $

查看原文本刊更多论文

一种电容性过中和抑制冻结诱发迟滞的低温cmos三尾比较器

与室温相比，在4.2K时，掺杂剂冻结严重增加了低温体CMOS晶体管的体电阻，高达10{^{{6}}}{\times}$。本文首次在文献中描述了这种增加的体电阻如何在动态比较器的锁存器中引入记忆效应，从而导致滞后。为了在存在噪声的情况下可靠地测量这种迟滞，开发了一种统计表征程序。对于输入参考噪声电压为348 $\mu $ VRMS的40nm块体CMOS强arm比较器，在6K时测量到的滞后电压为bb0 $ 898 $\mu $ V，大大降低了精度。因此，本文简要介绍了一种具有电容过中和的三尾比较器，以增加预放大增益，将迟滞> $6{\times}$抑制到仅141 $\mu $ V。

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来源期刊

IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程：电子与电气

CiteScore

7.90

自引率

20.50%

发文量

883

审稿时长

3.0 months

期刊介绍： TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.