{"title":"Sliding-Induced Out-of-Plane Ferroelectricity of 2D MnPS3 (Adv. Funct. Mater. 42/2025)","authors":"Xiangchao Weng, Jiabao Gui, Wenjun Chen, Junyang Tan, Shengnan Li, Lei Tang, Rongjie Zhang, Qiang Wei, Jiachun Xu, Changjiu Teng, Shilong Zhao, Bilu Liu","doi":"10.1002/adfm.71974","DOIUrl":null,"url":null,"abstract":"<p><b>Sliding-Induced Ferroelectricity</b></p><p>In their Research Article (10.1002/adfm.202503780), Wenjun Chen, Changjiu Teng, Shilong Zhao, and co-workers report sliding-induced out-of-plane ferroelectricity of 2D MnPS<sub>3</sub> at room temperature. By using 2D MnPS<sub>3</sub> as the ferroelectric gate dielectric to assemble FeFET, which shows bipolar memory behaviors at ambient and cryogenic temperatures. This work paves a way to fabricate ferroelectric devices with multi-functionality for next-generation information storage.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"35 42","pages":""},"PeriodicalIF":19.0000,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.71974","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Functional Materials","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.71974","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Sliding-Induced Ferroelectricity
In their Research Article (10.1002/adfm.202503780), Wenjun Chen, Changjiu Teng, Shilong Zhao, and co-workers report sliding-induced out-of-plane ferroelectricity of 2D MnPS3 at room temperature. By using 2D MnPS3 as the ferroelectric gate dielectric to assemble FeFET, which shows bipolar memory behaviors at ambient and cryogenic temperatures. This work paves a way to fabricate ferroelectric devices with multi-functionality for next-generation information storage.
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