Optimized ALD-ZnO Thin Films for High-Performance 12 μm Pixel Microbolometers: Fabrication, Simulation, and Design Strategies for Infrared Sensing

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials Pub Date : 2025-09-16 DOI:10.1021/acsaelm.5c01235

Bhavya Padha, , , Zahoor Ahmed, , , Naresh Padha, , , Dependra Singh Rawal, , , Isha Yadav*, , and , Sandeep Arya*,

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Abstract

A zinc oxide (ZnO)-based microbolometer with a 12 μm pixel pitch was developed using atomic layer deposition (ALD) on silica (SiO₂/Si) substrates for infrared (IR) detection. ZnO offers a complementary metal-oxide semiconductor (CMOS)-compatible, thermally stable, low-cost alternative, unlike conventional bolometers. ZnO thin films were deposited via ALD on SiO₂/Si substrates at 120, 150, and 200 °C for 1200, 1500, and 1800 cycles, respectively, and analyzed using various characterization techniques. The optimized ZnO thin film exhibited a −12.9 %/K temperature coefficient of resistance (TCR). Pixel design of all the films were carried out. Thermal modeling revealed a thermal conductance of 1.21 × 10^–7 W/K and a time constant of 336 μs. The designed pixel achieved a responsivity of 1.10 × 10⁸ V/W, noise equivalent power (NEP) of 4.13 × 10^–14 W/√Hz, detectivity of 1.84 × 10¹⁴ cm·√Hz/W, and noise equivalent temperature difference (NETD) of 77.43 mK. These results demonstrate the potential of CMOS-compatible ALD-grown ZnO for high-performance microbolometric IR sensing.

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用于高性能12 μm像素微测热计的优化ALD-ZnO薄膜：红外传感的制备、仿真和设计策略

采用原子层沉积（ALD）技术在二氧化硅（SiO2/Si）衬底上制备了一种12 μm像素间距的氧化锌（ZnO）微测热计，用于红外（IR）检测。与传统的测热计不同，ZnO提供了一种互补的金属氧化物半导体（CMOS）兼容、热稳定、低成本的替代方案。分别在120、150和200°C下，通过ALD在SiO2/Si衬底上沉积了1200、1500和1800个循环的ZnO薄膜，并使用各种表征技术对其进行了分析。优化后的ZnO薄膜电阻温度系数（TCR）为−12.9 %/K。对所有薄膜进行了像素化设计。热模拟结果表明，其导热系数为1.21 × 10-7 W/K，时间常数为336 μs。设计像素实现响应率为1.10 ×  V / 108 W,噪声等效功率(NEP) 4.13 × 10 - 14 W /√赫兹,探测能力1.84 × 1014 厘米·√Hz / W和噪声等效温差(77.43)经济技术开发区 可。这些结果证明了cmos兼容的ald生长ZnO在高性能微热红外传感方面的潜力。

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来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567

期刊介绍： ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/Abstracted： Web of Science SCIE Scopus CAS INSPEC Portico