{"title":"Influence of annealing temperatures on the structural, optical and electrical properties of vanadium-doped ZnO thin films","authors":"Apoorva Katoch , Navneet Kaur , Balraj Singh , Vandana Shinde , Raminder Kaur","doi":"10.1016/j.surfin.2025.107748","DOIUrl":null,"url":null,"abstract":"<div><div>This study investigates the influence of annealing temperature on the structural, optical, and electrical properties of pure and vanadium (V)-doped zinc oxide (ZnO) thin films prepared by the sol–gel dip-coating method. Three compositions were examined: undoped ZnO (ZV0), 1% V-doped ZnO (ZV1), and 3% V-doped ZnO (ZV3). The films were annealed from the as-deposited state up to 600 °C and characterized using X-ray diffraction, UV–Visible spectroscopy, Fourier-transform infrared spectroscopy, photoluminescence, and current–voltage measurements. The crystallite size varied around 42-46 nm, while the optical band gap decreased with increasing annealing temperature lowest value was recorded 3.00 eV for ZV 3 at 400 <strong>°C</strong>. The Urbach energy ranged from <strong>0.35 to 1.11</strong> <strong>eV</strong>, reflecting changes in defect states. Electrical analysis revealed a significant reduction in threshold voltage, with the lowest value of <strong>0.25</strong> <strong>V observed for the ZV3 sample annealed at 400 °C</strong>. These results demonstrate that annealing strongly governs crystallinity, defect density, and charge transport, with ZV3 annealed at 400 °C showing the most promising performance for optoelectronic applications.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"75 ","pages":"Article 107748"},"PeriodicalIF":6.3000,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surfaces and Interfaces","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468023025020000","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
This study investigates the influence of annealing temperature on the structural, optical, and electrical properties of pure and vanadium (V)-doped zinc oxide (ZnO) thin films prepared by the sol–gel dip-coating method. Three compositions were examined: undoped ZnO (ZV0), 1% V-doped ZnO (ZV1), and 3% V-doped ZnO (ZV3). The films were annealed from the as-deposited state up to 600 °C and characterized using X-ray diffraction, UV–Visible spectroscopy, Fourier-transform infrared spectroscopy, photoluminescence, and current–voltage measurements. The crystallite size varied around 42-46 nm, while the optical band gap decreased with increasing annealing temperature lowest value was recorded 3.00 eV for ZV 3 at 400 °C. The Urbach energy ranged from 0.35 to 1.11eV, reflecting changes in defect states. Electrical analysis revealed a significant reduction in threshold voltage, with the lowest value of 0.25V observed for the ZV3 sample annealed at 400 °C. These results demonstrate that annealing strongly governs crystallinity, defect density, and charge transport, with ZV3 annealed at 400 °C showing the most promising performance for optoelectronic applications.
期刊介绍:
The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results.
Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)