A new circuit configuration for emulating charge/flux controlled memelements

IF 2.5 3区工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

Integration-The Vlsi Journal Pub Date : 2025-10-09 DOI:10.1016/j.vlsi.2025.102576

Shashi Prakash, Mayank Srivastava, Mrutyunjay Rout

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引用次数: 0

Abstract

The mem-elements are the extension of the memristor idea to memory capacitors and inductors. In this article, an electronic circuit is designed to realize the behavior of all three mem-elements: the memristor, meminductor, and memcapacitor. A key aspect of this study is that the proposed emulator can implement a charge-controlled memristor (CCMR), a flux-controlled memcapacitor (FCMC), and a flux-controlled meminductor (FCMI) using a CCII and Transconductance amplifier (TA), with only a few passive elements and switches. The performance of the proposed emulator is analyzed through simulation results obtained using P-Spice software. The frequency range of the proposed emulator is found to be satisfactory, with an operating frequency of up to 1.2 MHz. Furthermore, these results are validated by available commercial ICs like AD844 and LM13700. The analysis of various parameters, including Monte Carlo simulations, electronic tunability, and non-volatile behavior, demonstrates the strength and robustness of the proposed emulator. Additionally, this emulator has potential applications in neuromorphic computing, as it can mimic associative learning behavior and amoeba-like behavior in memristor and meminductor networks, respectively. The proposed design has also been validated on the breadboard implementation using physical ICs and results are demonstrated.

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一种模拟电荷/磁通控制元件的新电路结构

记忆元件是记忆电阻器思想在记忆电容器和电感中的延伸。在本文中，设计了一个电子电路来实现所有三个mems元件的行为：忆阻器，忆电感器和忆电容。本研究的一个关键方面是，所提出的仿真器可以实现一个电荷控制的忆阻器（CCMR），一个磁通控制的memcapacitor (FCMC)，以及一个磁通控制的meminductor (FCMI)，使用一个CCII和跨导放大器（TA），只有少数的无源元件和开关。通过P-Spice软件的仿真结果，分析了该仿真器的性能。仿真器的频率范围令人满意，工作频率高达1.2 MHz。此外，这些结果还通过AD844和LM13700等现有商用ic进行了验证。各种参数的分析，包括蒙特卡罗模拟，电子可调性和非易失性行为，证明了所提出的模拟器的强度和鲁棒性。此外，该模拟器在神经形态计算中有潜在的应用，因为它可以分别模拟记忆电阻器和记忆电感网络中的联想学习行为和阿米巴样行为。所提出的设计也已在使用物理ic的面包板实现上进行了验证，并展示了结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Integration-The Vlsi Journal 工程技术-工程：电子与电气

CiteScore

3.80

自引率

5.30%

发文量

107

审稿时长

6 months

期刊介绍： Integration''s aim is to cover every aspect of the VLSI area, with an emphasis on cross-fertilization between various fields of science, and the design, verification, test and applications of integrated circuits and systems, as well as closely related topics in process and device technologies. Individual issues will feature peer-reviewed tutorials and articles as well as reviews of recent publications. The intended coverage of the journal can be assessed by examining the following (non-exclusive) list of topics: Specification methods and languages; Analog/Digital Integrated Circuits and Systems; VLSI architectures; Algorithms, methods and tools for modeling, simulation, synthesis and verification of integrated circuits and systems of any complexity; Embedded systems; High-level synthesis for VLSI systems; Logic synthesis and finite automata; Testing, design-for-test and test generation algorithms; Physical design; Formal verification; Algorithms implemented in VLSI systems; Systems engineering; Heterogeneous systems.