Cross-regulation characteristics of non-ideal single-inductor dual-output buck converter with voltage controlled

IF 2.5 3区工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

Integration-The Vlsi Journal Pub Date : 2025-10-03 DOI:10.1016/j.vlsi.2025.102575

Bingli Liu , Jiarong Wu , Liping Luo , Chunming Wen , Weilin Wu , Hailong Ma

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引用次数: 0

Abstract

Single-inductor multiple-output (SIMO) dc-dc converters are widely adopted in smart homes due to their high efficiency and small circuit volume. However, cross-regulation (CR) seriously influences the dynamic performance and the stability of SIMO dc-dc converters. In this paper, the CR characteristics of a non-ideal single-inductor dual-output (NI-SIDO) Buck converter with voltage control are analyzed, which includes parasitic resistors of the inductor and output capacitors. A nonlinear mathematical model and small-signal circuit are built, deducing the CR transfer functions and CR impedances. Therefore, the important factors affecting the CR are explored. Moreover, the CR characteristics are studied by the Bode plot under the common-mode voltage and differential-mode voltage control. The simulation results demonstrate that increasing the parasitic resistor of the inductor reduces the CR between the output branches. Furthermore, when the parasitic resistor of a branch output capacitor increases, the CR of the other output branch decreases accordingly. Finally, an experimental prototype is constructed to provide the correctness of the theoretical analysis.

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电压控制下非理想单电感双输出降压变换器的交叉调节特性

单电感多输出（SIMO） dc-dc变换器以其效率高、电路体积小等优点被广泛应用于智能家居中。然而，交叉调节严重影响SIMO dc-dc变换器的动态性能和稳定性。本文分析了具有电压控制的非理想单电感双输出（NI-SIDO） Buck变换器的CR特性，包括电感的寄生电阻和输出电容。建立了非线性数学模型和小信号电路，推导了CR传递函数和CR阻抗。因此，对影响CR的重要因素进行了探讨。此外，利用波德图研究了共模电压和差模电压控制下的CR特性。仿真结果表明，增大电感的寄生电阻可以降低输出支路间的电阻阻抗。另外，当一个支路输出电容的寄生电阻增大时，另一个输出支路的CR相应减小。最后搭建了实验样机，验证了理论分析的正确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Integration-The Vlsi Journal 工程技术-工程：电子与电气

CiteScore

3.80

自引率

5.30%

发文量

107

审稿时长

6 months

期刊介绍： Integration''s aim is to cover every aspect of the VLSI area, with an emphasis on cross-fertilization between various fields of science, and the design, verification, test and applications of integrated circuits and systems, as well as closely related topics in process and device technologies. Individual issues will feature peer-reviewed tutorials and articles as well as reviews of recent publications. The intended coverage of the journal can be assessed by examining the following (non-exclusive) list of topics: Specification methods and languages; Analog/Digital Integrated Circuits and Systems; VLSI architectures; Algorithms, methods and tools for modeling, simulation, synthesis and verification of integrated circuits and systems of any complexity; Embedded systems; High-level synthesis for VLSI systems; Logic synthesis and finite automata; Testing, design-for-test and test generation algorithms; Physical design; Formal verification; Algorithms implemented in VLSI systems; Systems engineering; Heterogeneous systems.