K. Kamalakkannan , R. Rajaraman , K. Sivaji , Mukesh Ranjan
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引用次数: 0
Abstract
Photoluminescence spectroscopy investigation was conducted on semi-insulating 6H-Silicon Carbide subjected to nitrogen ion implantation at fluences of 1015 and 1016 N+/cm2 with 130 keV energy, followed by annealing at 800 °C to study recrystallization effects. Deformations related to deep levels variation with implantation and defect recovery were investigated from intrinsic luminescence peaks. Annealing triggers asymmetrical to symmetrical sharp luminescence peaks and regaining the active radiative centers at ∼555 nm and ∼561 nm. The perceptible change in quantification of disorder 1-Anorm, with annealing revealed the partial recovery of the high fluence samples indicating the defects accumulations.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
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