Ga2O3-graphene oxide hybrid optical sensor

IF 2.7 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Letters Pub Date : 2025-10-02 DOI:10.1016/j.matlet.2025.139602

Huy-Binh Do , Tuan-Huu Nguyen , Thuy-Hong-Lam Ngo , Anh-Vu Phan-Gia , Thuy Nguyen-Thuy-Ngoc , Thanh-Liem Huynh , Nam Nguyen-Dang

{"title":"Ga2O3-graphene oxide hybrid optical sensor","authors":"Huy-Binh Do , Tuan-Huu Nguyen , Thuy-Hong-Lam Ngo , Anh-Vu Phan-Gia , Thuy Nguyen-Thuy-Ngoc , Thanh-Liem Huynh , Nam Nguyen-Dang","doi":"10.1016/j.matlet.2025.139602","DOIUrl":null,"url":null,"abstract":"<div><div>An optical sensor based on hydrothermally synthesized Ga₂O₃@graphene oxide (GO) composite is fabricated and characterized by various techniques. Scanning Electron Microscopy (SEM) images show Ga₂O₃ attached to GO nanosheets. A marked drop in I<sub>D</sub>/I<sub>G</sub> (0.99 to 0.63) and I<sub>D’</sub>/I<sub>G</sub> (0.41 to 0.33) ratios in the Raman spectra after Ga₂O₃ incorporation into GO indicates effective defect passivation in GO. The Ga₂O₃@GO sensor shows a strong short-wavelength response (I<sub>405nm</sub>/I<sub>650nm</sub> ≈ 5.5 at 45 mW/cm<sup>2</sup>, 10 V), with rise and fall times of 1.55 and 1.89 s under 405 nm, shorter by 21.3 and 13.3 % compared to 650 nm. Responsivity (R) and external quantum efficiency (EQE) reach 2.91 A/W and 892 % respectively, surpassing electrochemically exfoliated GO-based photodetectors, with R ∼ 580 times higher than the values reported in prior studies at comparable response times. The W/Ti/Ga₂O₃@GO photodetector exhibits a Schottky barrier of 0.42 eV and an ideality factor of ∼6, indicating tunneling-dominated transport at the Ga₂O₃/GO heterojunction.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"404 ","pages":"Article 139602"},"PeriodicalIF":2.7000,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X25016325","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

An optical sensor based on hydrothermally synthesized Ga₂O₃@graphene oxide (GO) composite is fabricated and characterized by various techniques. Scanning Electron Microscopy (SEM) images show Ga₂O₃ attached to GO nanosheets. A marked drop in I_D/I_G (0.99 to 0.63) and I_D’/I_G (0.41 to 0.33) ratios in the Raman spectra after Ga₂O₃ incorporation into GO indicates effective defect passivation in GO. The Ga₂O₃@GO sensor shows a strong short-wavelength response (I_405nm/I_650nm ≈ 5.5 at 45 mW/cm², 10 V), with rise and fall times of 1.55 and 1.89 s under 405 nm, shorter by 21.3 and 13.3 % compared to 650 nm. Responsivity (R) and external quantum efficiency (EQE) reach 2.91 A/W and 892 % respectively, surpassing electrochemically exfoliated GO-based photodetectors, with R ∼ 580 times higher than the values reported in prior studies at comparable response times. The W/Ti/Ga₂O₃@GO photodetector exhibits a Schottky barrier of 0.42 eV and an ideality factor of ∼6, indicating tunneling-dominated transport at the Ga₂O₃/GO heterojunction.

Abstract Image

查看原文本刊更多论文

ga2o3 -氧化石墨烯混合光学传感器

制备了一种基于水热合成的Ga₂O₃@氧化石墨烯（GO）复合材料的光学传感器，并通过各种技术对其进行了表征。扫描电子显微镜（SEM）图像显示，Ga₂O₃附着在氧化石墨烯纳米片上。在氧化石墨烯中掺入Ga₂O₃后，Raman光谱中ID/IG（0.99 ~ 0.63）和ID′/IG（0.41 ~ 0.33）的比值显著下降，表明氧化石墨烯中缺陷钝化有效。Ga₂O₃@GO传感器在45 mW/cm2, 10 V下具有较强的短波长响应（I405nm/I650nm≈5.5），在405nm下的上升和下降时间分别为1.55和1.89 s，比650nm分别缩短了21.3%和13.3%。响应率(R)和外量子效率（EQE）分别达到2.91 A/W和892%，超过了电化学剥离的氧化石墨烯基光电探测器，在相同的响应时间内，R比先前研究报告的值高580倍。W/Ti/Ga₂O₃@GO光电探测器表现出0.42 eV的Schottky势垒和~ 6的理想因子，表明Ga₂O₃/GO异质结的隧穿主导输运。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Materials Letters 工程技术-材料科学：综合

CiteScore

5.60

自引率

3.30%

发文量

1948

审稿时长

50 days

期刊介绍： Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review. Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials. Contributions include, but are not limited to, a variety of topics such as: • Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors • Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart • Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction • Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots. • Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing. • Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic • Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive