Impact of transition metal doping on the optical and electrical properties of zinc sulfide: advancing photovoltaic performance

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-10-10 DOI:10.1007/s10854-025-15840-6

A. Yousfi, M. El Bouji, Y. Nejmi, Y. Ait-Alla, H. El Farri, N. Ait Labyad, I. Benaicha, A. El-Habib, A. Fahmi, A. Raidou, S. Amraoui, K. Nouneh, M. Taibi, M. Fahoume

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引用次数: 0

Abstract

This study explores the impact of cobalt (Co²⁺) and nickel (Ni²⁺) doping on the structural, optical, and electrical properties of ZnS thin films synthesized via the SILAR technique. X-ray diffraction (XRD) confirmed a cubic polycrystalline structure with lattice distortion more pronounced in Co-doped films due to ionic radius differences. SEM and EDX analyses showed uniform elemental distribution and improved grain growth with increasing dopant content. Optical measurements revealed a tunable band gap, decreasing from 3.73 eV (undoped) to 3.51 eV (6% Co) and 3.54 eV (6% Ni), accompanied by reduced transmittance. While both dopants influenced the optical behavior, cobalt doping resulted in more significant changes. Electrical measurements performed on Co-doped samples revealed enhanced conductivity and carrier mobility, attributed to donor-like states near the conduction band minimum. These results position Co-doped ZnS as a promising material for optoelectronic and photovoltaic applications, with doping levels up to 6% offering optimal performance without compromising structural integrity.

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过渡金属掺杂对硫化锌光电性能的影响：提高光伏性能

本研究探讨了钴（Co2 +）和镍（Ni2 +）掺杂对SILAR技术合成的ZnS薄膜结构、光学和电学性能的影响。x射线衍射（XRD）证实了共掺杂薄膜的立方多晶结构，由于离子半径的差异，晶格畸变更为明显。SEM和EDX分析表明，随着掺杂量的增加，元素分布均匀，晶粒生长加快。光学测量显示带隙可调，从3.73 eV（未掺杂）降低到3.51 eV （6% Co）和3.54 eV (6% Ni)，同时透射率降低。两种掺杂剂都对光学行为有影响，但钴掺杂对光学行为的影响更为显著。在共掺杂样品上进行的电学测量显示，由于在导带最小值附近的供体态，其导电性和载流子迁移率得到了增强。这些结果表明，共掺杂ZnS作为光电子和光伏应用的一种有前途的材料，掺杂水平高达6%，在不影响结构完整性的情况下提供最佳性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.