{"title":"Bimolecular Passivation Layer Modified NiOx to Improve the Efficiency and Stability of Perovskite Solar Cells","authors":"Wentao Ma, Xu Ren, Jinxi Wang, Xiao Tan, Mengshuan Cui, Kai Liu, Huixian Ren, Jiamei Liu, Hanying Wang, Xiaoyan Xi, Shiqing Bi","doi":"10.1021/acsami.5c16972","DOIUrl":null,"url":null,"abstract":"NiO<sub><i>x</i></sub> as a hole transport layer (HTL) for inverted perovskite solar cells (PSCs) shows significant commercialization prospects for enhancing device efficiency. However, limited by the problem of defects at the interface between perovskite and NiO<sub><i>x</i></sub>, achieving effective interfacial passivation still faces many challenges. In this study, Me-4PACz is doped with potassium 4-chlorophenyl trifluoroborate (PCPTFB) to form a co-self-assembled monolayer (Co-SAM) to modify the buried interface of PSCs. The system effectively passivates NiO<sub><i>x</i></sub> surface defects by PCPTFB, optimizes the Ni<sup>3+</sup>/Ni<sup>2+</sup> ratio, enhances the hole extraction capability, and improves the energy band matching. In addition, PCPTFB synergistically stabilized the perovskite interface, reduced nonradiative recombination, and promoted the formation of high-quality perovskite films. Based on the above optimization, the Me-4PACz+PCPTFB modified device achieved an excellent photoelectric conversion efficiency (PCE) of 23.68%. For the stability test, the unencapsulated PSCs maintained an initial efficiency of 90% after 1400 h of aging in a nitrogen environment, demonstrating excellent long-term stability. This innovative strategy not only highlights the important role of Me-4PACz+PCPTFB in NiO<sub><i>x</i></sub>/perovskite interfacial engineering but also provides a new technological path to realize efficient and stable PSCs.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"50 1","pages":""},"PeriodicalIF":8.2000,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.5c16972","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
NiOx as a hole transport layer (HTL) for inverted perovskite solar cells (PSCs) shows significant commercialization prospects for enhancing device efficiency. However, limited by the problem of defects at the interface between perovskite and NiOx, achieving effective interfacial passivation still faces many challenges. In this study, Me-4PACz is doped with potassium 4-chlorophenyl trifluoroborate (PCPTFB) to form a co-self-assembled monolayer (Co-SAM) to modify the buried interface of PSCs. The system effectively passivates NiOx surface defects by PCPTFB, optimizes the Ni3+/Ni2+ ratio, enhances the hole extraction capability, and improves the energy band matching. In addition, PCPTFB synergistically stabilized the perovskite interface, reduced nonradiative recombination, and promoted the formation of high-quality perovskite films. Based on the above optimization, the Me-4PACz+PCPTFB modified device achieved an excellent photoelectric conversion efficiency (PCE) of 23.68%. For the stability test, the unencapsulated PSCs maintained an initial efficiency of 90% after 1400 h of aging in a nitrogen environment, demonstrating excellent long-term stability. This innovative strategy not only highlights the important role of Me-4PACz+PCPTFB in NiOx/perovskite interfacial engineering but also provides a new technological path to realize efficient and stable PSCs.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.